Das, Dipjyoti, Ravindran, Prasanna Venkatesan, Park, Chinsung, Tasneem, Nujhat, Wang, Zheng, Chen, Hang, Chern, Winston, Yu, Shimeng, Datta, Suman, and Khan, Asif. A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage. Retrieved from https://par.nsf.gov/biblio/10402097. IEEE Electron Device Letters 44.2 Web. doi:10.1109/LED.2022.3231123.

Das, Dipjyoti, Ravindran, Prasanna Venkatesan, Park, Chinsung, Tasneem, Nujhat, Wang, Zheng, Chen, Hang, Chern, Winston, Yu, Shimeng, Datta, Suman, & Khan, Asif. A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage. IEEE Electron Device Letters, 44 (2). Retrieved from https://par.nsf.gov/biblio/10402097. https://doi.org/10.1109/LED.2022.3231123

Das, Dipjyoti, Ravindran, Prasanna Venkatesan, Park, Chinsung, Tasneem, Nujhat, Wang, Zheng, Chen, Hang, Chern, Winston, Yu, Shimeng, Datta, Suman, and Khan, Asif. "A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage". IEEE Electron Device Letters 44 (2). Country unknown/Code not available. https://doi.org/10.1109/LED.2022.3231123. https://par.nsf.gov/biblio/10402097.

@article{osti_10402097,
place = {Country unknown/Code not available}, title = {A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage}, url = {https://par.nsf.gov/biblio/10402097}, DOI = {10.1109/LED.2022.3231123}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {44}, number = {2}, author = {Das, Dipjyoti and Ravindran, Prasanna Venkatesan and Park, Chinsung and Tasneem, Nujhat and Wang, Zheng and Chen, Hang and Chern, Winston and Yu, Shimeng and Datta, Suman and Khan, Asif}, }