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Metalorganic chemical vapor deposition (MOCVD) growths of β-Ga 2 O 3 on on-axis (100) Ga 2 O 3 substrates are comprehensively investigated. Key MOCVD growth parameters including growth temperature, pressure, group VI/III molar flow rate ratio, and carrier gas flow rate are mapped. The dependence of the growth conditions is correlated with surface morphology, growth rate, and electron transport properties of the MOCVD grown (100) β-Ga 2 O 3 thin films. Lower shroud gas (argon) flow is found to enhance the surface smoothness with higher room temperature (RT) electron Hall mobility. The growth rate of the films decreases but with an increase of electron mobility as the VI/III molar flow rate ratio increases. Although no significant variation on the surface morphologies is observed at different growth temperatures, the general trend of electron Hall mobilities are found to increase with increasing growth temperature. The growth rates reduce significantly with uniform surface morphologies as the chamber pressure increases. By tuning the silane flow rate, the controllable carrier concentration of (100) β-Ga 2 O 3 thin films between low-10 17 cm −3 and low-10 18 cm −3 was achieved. Under optimized growth condition, an (100) β-Ga 2 O 3 thin film with RMS roughness value of 1.64 nm and a RT mobility of 24 cm 2 /Vs at a carrier concentration of 7.0 × 10 17 cm −3 are demonstrated. The mobilities are primarily limited by the twin lamellae and stacking faults defects generated from the growth interface. Atomic resolution scanning transmission electron microscopy reveals the formation of twin boundary defects in the films, resulting in the degradation of crystalline quality. Results from this work provide fundamental understanding of the MOCVD epitaxy of (100) β-Ga 2 O 3 on on-axis Ga 2 O 3 substrates and the dependence of the material properties on growth conditions. The limitation of electron transport properties of the (100) β-Ga 2 O 3 thin films below 25 cm 2 /Vs is attributed to the formation of incoherent boundaries (twin lamellae) and stacking faults grown along the on-axis (100) crystal orientation.
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A Review of Recent Progress in β‐Ga 2 O 3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition
Gallium oxide (Ga2O3) is a highly promising ultrawide‐bandgap semiconductor for power electronics that emerged about a decade ago. Epitaxial growth Ga2O3at the small scale is demonstrated. In order to develop scalable manufacturing of high‐performance epitaxial structures, in‐depth understanding of the fundamental growth processes, control parameters, and mechanism is imperative. This review discusses the recent progress in epitaxial growth of β‐Ga2O3films and highlights challenges in obtaining high growth rate, low defects, and high carrier mobilities. Compared with the other epitaxy methods, metal–organic chemical vapor deposition (MOCVD) offers a wider growth window and precursor selection option, to minimize the tradeoff between crystal quality and growth rate. Growth rate is inversely proportional to temperature, within a certain temperature window, because of the unavoidable premature gas‐phase reactions and desorption of the highly volatile gallium suboxide (Ga2O) at elevated temperatures. Growth defects, background impurity incorporation, and carrier mobilities can be affected by the choice of MOCVD precursors, nucleation, and adsorption/desorption/diffusion of adatoms on substrate surfaces of different orientations, including the effect of growing on cleavage and noncleavage planes. This review summarizes the current status of the epitaxial growth of β‐Ga2O3and analyzes the major factors that enhance mobility and reduce background doping concentration. The insights gained help advance the manufacturability of device‐grade epitaxial thin films.
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- Award ID(s):
- 1809946
- PAR ID:
- 10408073
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- physica status solidi (a)
- Volume:
- 220
- Issue:
- 8
- ISSN:
- 1862-6300
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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