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   https://doi.org/10.1103/PhysRevMaterials.4.073403  

   Koju, R. K. ; Mishin, Y. ( July 2020 , Physical Review Materials)

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2. Atomistic study of grain-boundary segregation and grain-boundary diffusion in Al-Mg alloys

   https://doi.org/10.1016/j.actamat.2020.10.029  

   Koju, R.K. ; Mishin, Y. ( December 2020 , Acta Materialia)

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3. Learning the grain boundary manifold: tools for visualizing and fitting grain boundary properties

   https://doi.org/10.1016/j.actamat.2020.05.024  

   Chesser, I. ; Francis, T. ; De Graef, M. ; Holm, E.A. ( May 2020 , Acta Materialia)
4. Free energy of grain boundary phases: Atomistic calculations for Σ5(310)[001] grain boundary in Cu

   https://doi.org/10.1103/PhysRevMaterials.2.093603  

   Freitas, Rodrigo ; Rudd, Robert E. ; Asta, Mark ; Frolov, Timofey ( September 2018 , Physical Review Materials)
5. Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene

   https://doi.org/10.3390/nano12020206  

   Park, Honghwi ; Lee, Junyeong ; Lee, Chang-Ju ; Kang, Jaewoon ; Yun, Jiyeong ; Noh, Hyowoong ; Park, Minsu ; Lee, Jonghyung ; Park, Youngjin ; Park, Jonghoo ; et al ( January 2022 , Nanomaterials)

   The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths. 

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