Lyu, Deyuan, Khanal, Pravin, Lv, Yang, Zhou, Bowei, Yun, Hwanhui, Jia, Qi, Zink, Brandon R., Fan, Yihong, Mkhoyan, K. Andre, Wang, Weigang, and Wang, Jian-Ping. Sub-ns Switching and Cryogenic-Temperature Performance of Mo-Based Perpendicular Magnetic Tunnel Junctions. Retrieved from https://par.nsf.gov/biblio/10411193. IEEE Electron Device Letters 43.8 Web. doi:10.1109/led.2022.3184278.

Lyu, Deyuan, Khanal, Pravin, Lv, Yang, Zhou, Bowei, Yun, Hwanhui, Jia, Qi, Zink, Brandon R., Fan, Yihong, Mkhoyan, K. Andre, Wang, Weigang, & Wang, Jian-Ping. Sub-ns Switching and Cryogenic-Temperature Performance of Mo-Based Perpendicular Magnetic Tunnel Junctions. IEEE Electron Device Letters, 43 (8). Retrieved from https://par.nsf.gov/biblio/10411193. https://doi.org/10.1109/led.2022.3184278

Lyu, Deyuan, Khanal, Pravin, Lv, Yang, Zhou, Bowei, Yun, Hwanhui, Jia, Qi, Zink, Brandon R., Fan, Yihong, Mkhoyan, K. Andre, Wang, Weigang, and Wang, Jian-Ping. "Sub-ns Switching and Cryogenic-Temperature Performance of Mo-Based Perpendicular Magnetic Tunnel Junctions". IEEE Electron Device Letters 43 (8). Country unknown/Code not available. https://doi.org/10.1109/led.2022.3184278. https://par.nsf.gov/biblio/10411193.

@article{osti_10411193,
place = {Country unknown/Code not available}, title = {Sub-ns Switching and Cryogenic-Temperature Performance of Mo-Based Perpendicular Magnetic Tunnel Junctions}, url = {https://par.nsf.gov/biblio/10411193}, DOI = {10.1109/led.2022.3184278}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {43}, number = {8}, author = {Lyu, Deyuan and Khanal, Pravin and Lv, Yang and Zhou, Bowei and Yun, Hwanhui and Jia, Qi and Zink, Brandon R. and Fan, Yihong and Mkhoyan, K. Andre and Wang, Weigang and Wang, Jian-Ping}, }