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Low temperature plasmas are an emerging method to synthesize high quality nanoparticles (NPs). An established and successful technique to produce NPs is using a capacitively coupled plasma (CCP) in cylindrical geometry. Although a robust synthesis technique, optimizing or specifying NP properties using CCPs, is challenging. In this paper, results from a computational investigation for the growth of silicon NPs in flowing inductively coupled plasmas (ICPs) using Ar/SiH4 gas mixtures of up to a few Torr are discussed. ICPs produce more locally constrained and quiescent plasma potentials. These positive plasma potentials produce an electrostatic trap for negatively charged NPs, which can significantly extend the residence time of NPs in the plasma, which in turn provides a controllable period for particle growth. The computational platforms used in this study consist of a two-dimensional plasma hydrodynamics model, a three-dimensional nanoparticle growth and trajectory tracking model, and a molecular dynamics simulation for deriving reactive sticking coefficients of silane radicals on Si NPs. Trends for the nanoparticle growth as a function of SiH4 inlet fraction, gas residence time, energy deposition per particle, pressure, and reactor diameter are discussed. The general path for particle synthesis is the trapping of small NPs in the positive electrostatic potential, followed by entrainment in the gas flow upon reaching a critical particle size. Optimizing or controlling NP synthesis then depends on the spatial distribution of plasma potential, the density of growth species, and the relative time that particles spend in the electrostatic trap and flowing through higher densities of growth species upon leaving the trap.
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Particle trapping, size-filtering, and focusing in the nonthermal plasma synthesis of sub-10 nanometer particles
Abstract Low-pressure nonthermal flowing plasmas are widely used for the gas-phase synthesis of nanoparticles and quantum dots of materials that are difficult or impractical to synthesize using other techniques. To date, the impact of temporary electrostatic particle trapping in these plasmas has not been recognized, a process that may be leveraged to control particle properties. Here, we present experimental and computational evidence that, during their growth in the plasma, sub-10 nm silicon particles become temporarily confined in an electrostatic trap in radio-frequency excited plasmas until they grow to a size at which the increasing drag force imparted by the flowing gas entrains the particles, carrying them out of the trap. We demonstrate that this trapping enables the size filtering of the synthesized particles, leading to highly monodisperse particle sizes, as well as the electrostatic focusing of the particles onto the reactor centerline. Understanding of the mechanisms and utilization of such particle trapping will enable the design of plasma processes with improved size control and the ability to grow heterostructured nanoparticles.
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- Award ID(s):
- 2011401
- PAR ID:
- 10411315
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 55
- Issue:
- 23
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- 235202
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1088/1361-6463/ac57de
