Zhang, Zexuan, Hayashi, Yusuke, Tohei, Tetsuya, Sakai, Akira, Protasenko, Vladimir, Singhal, Jashan, Miyake, Hideto, Xing, Huili Grace, Jena, Debdeep, and Cho, YongJin. Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning. Retrieved from https://par.nsf.gov/biblio/10411454. Science Advances 8.36 Web. doi:10.1126/sciadv.abo6408.

Zhang, Zexuan, Hayashi, Yusuke, Tohei, Tetsuya, Sakai, Akira, Protasenko, Vladimir, Singhal, Jashan, Miyake, Hideto, Xing, Huili Grace, Jena, Debdeep, & Cho, YongJin. Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning. Science Advances, 8 (36). Retrieved from https://par.nsf.gov/biblio/10411454. https://doi.org/10.1126/sciadv.abo6408

Zhang, Zexuan, Hayashi, Yusuke, Tohei, Tetsuya, Sakai, Akira, Protasenko, Vladimir, Singhal, Jashan, Miyake, Hideto, Xing, Huili Grace, Jena, Debdeep, and Cho, YongJin. "Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning". Science Advances 8 (36). Country unknown/Code not available. https://doi.org/10.1126/sciadv.abo6408. https://par.nsf.gov/biblio/10411454.

@article{osti_10411454,
place = {Country unknown/Code not available}, title = {Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning}, url = {https://par.nsf.gov/biblio/10411454}, DOI = {10.1126/sciadv.abo6408}, abstractNote = {Atomic surface cleaning has enabled successful growth of ultrawide bandgap nitrogen-polar aluminum nitride semiconductors.}, journal = {Science Advances}, volume = {8}, number = {36}, author = {Zhang, Zexuan and Hayashi, Yusuke and Tohei, Tetsuya and Sakai, Akira and Protasenko, Vladimir and Singhal, Jashan and Miyake, Hideto and Xing, Huili Grace and Jena, Debdeep and Cho, YongJin}, }