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  • Morphology and Growth Habit of the New Flux-Grown Layered Semiconductor KBiS 2 Revealed by Diffraction Contrast Tomography
Title: Morphology and Growth Habit of the New Flux-Grown Layered Semiconductor KBiS 2 Revealed by Diffraction Contrast Tomography
Award ID(s):
1720633
PAR ID:
10412216
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Crystal Growth & Design
Volume:
22
Issue:
5
ISSN:
1528-7483
Page Range / eLocation ID:
3228 to 3234
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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