Sutherland, Duncan R.; Merrill, Devin R.; Ditto, Jeffrey; Moore, Daniel B.; Medlin, Douglas; Johnson, David C.
(, Journal of the American Chemical Society)
Bansal, Anushka, Nayir, Nadire, Wang, Ke, Rondomanski, Patrick, Subramanian, Shruti, Kumari, Shalini, Robinson, Joshua A., van Duin, Adri C., and Redwing, Joan M. Toward a Mechanistic Understanding of the Formation of 2D-GaN x in Epitaxial Graphene. Retrieved from https://par.nsf.gov/biblio/10412484. ACS Nano 17.1 Web. doi:10.1021/acsnano.2c07091.
Bansal, Anushka, Nayir, Nadire, Wang, Ke, Rondomanski, Patrick, Subramanian, Shruti, Kumari, Shalini, Robinson, Joshua A., van Duin, Adri C., & Redwing, Joan M. Toward a Mechanistic Understanding of the Formation of 2D-GaN x in Epitaxial Graphene. ACS Nano, 17 (1). Retrieved from https://par.nsf.gov/biblio/10412484. https://doi.org/10.1021/acsnano.2c07091
Bansal, Anushka, Nayir, Nadire, Wang, Ke, Rondomanski, Patrick, Subramanian, Shruti, Kumari, Shalini, Robinson, Joshua A., van Duin, Adri C., and Redwing, Joan M.
"Toward a Mechanistic Understanding of the Formation of 2D-GaN x in Epitaxial Graphene". ACS Nano 17 (1). Country unknown/Code not available. https://doi.org/10.1021/acsnano.2c07091.https://par.nsf.gov/biblio/10412484.
@article{osti_10412484,
place = {Country unknown/Code not available},
title = {Toward a Mechanistic Understanding of the Formation of 2D-GaN x in Epitaxial Graphene},
url = {https://par.nsf.gov/biblio/10412484},
DOI = {10.1021/acsnano.2c07091},
abstractNote = {},
journal = {ACS Nano},
volume = {17},
number = {1},
author = {Bansal, Anushka and Nayir, Nadire and Wang, Ke and Rondomanski, Patrick and Subramanian, Shruti and Kumari, Shalini and Robinson, Joshua A. and van Duin, Adri C. and Redwing, Joan M.},
}
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