Abstract We report relatively persistent, open‐shell thiophene‐based double helices, radical cations 1•+‐TMS12and 2•+‐TMS8. Closed‐shell neutral double helices, 1‐TMS12and 2‐TMS8, have nearly identical first oxidation potentials,E+/0 ≈ +1.33 V, corresponding to reversible oxidation to their radical cations. The radical cations are generated, using tungsten hexachloride in dichloromethane (DCM) as an oxidant,E+/0 ≈ +1.56 V. EPR spectra consist of a relatively sharp singlet peak with an unusually lowg‐value of 2.001–2.002, thus suggesting exclusive delocalization of spin density over π‐conjugated system consisting of carbon atoms only. DFT computations confirm these findings, as only negligible fraction of spin density is found on sulfur and silicon atoms and the spin density is delocalized over a single tetrathiophene moiety. For radical cation, 1•+‐TMS12, energy level of the singly occupied molecular orbital (SOMO) lies below the four highest occupied molecular orbitals (HOMOs), thus indicating the SOMO–HOMO inversion (SHI) and therefore, violating the Aufbau principle. 1•+‐TMS12has a half‐life of the order of only 5 min at room temperature. EPR peak intensity of 2•+‐TMS8, which does not show SHI, is practically unchanged over at least 2 h.
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Organic radicals with inversion of SOMO and HOMO energies and potential applications in optoelectronics
Organic radicals possessing an electronic configuration in which the energy of the singly occupied molecular orbital (SOMO) is below the highest doubly occupied molecular orbital (HOMO) level have recently attracted significant interest, both theoretically and experimentally. The peculiar orbital energetics of these SOMO–HOMO inversion (SHI) organic radicals set their electronic properties apart from the more common situation where the SOMO is the highest occupied orbital of the system. This review gives a general perspective on SHI, with key fundamental aspects regarding the electronic and structural factors that govern this particular electronic configuration in organic radicals. Selected examples of reported compounds with SHI are highlighted to establish molecular guidelines for designing this type of radical, and to showcase the potential of SHI radicals in organic spintronics as well as for the development of more stable luminescent radicals for OLED applications.
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- Award ID(s):
- 1855470
- PAR ID:
- 10412912
- Date Published:
- Journal Name:
- Chemical Science
- Volume:
- 13
- Issue:
- 34
- ISSN:
- 2041-6520
- Page Range / eLocation ID:
- 9833 to 9847
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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