Abstract A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a ‘soft sputtering mode’, which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. The ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.
more »
« less
Ultra-thin silver films grown by sputtering with a soft ion beam-treated intermediate layer
Silver thin films have wide-ranging applications in optical coatings and optoelectronic devices. However, their poor wettability to substrates such as glass often leads to an island growth mode, known as the Volmer–Weber mode. This study demonstrates a method that utilizes a low-energy ion beam (IB) treatment in conjunction with magnetron sputtering to fabricate continuous silver films as thin as 6 nm. A single-beam ion source generates low-energy soft ions to establish a nominal 1 nm seed silver layer, which significantly enhances the wettability of the subsequently deposited silver films, resulting in a continuous film of approximately 6 nm with a resistivity as low as 11.4
- PAR ID:
- 10420783
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 56
- Issue:
- 36
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- Article No. 365501
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
more » « less
A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon (a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C2H2 gas, a-C:H films were deposited at a rate of ∼26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transparent with a transmittance of over 90% in the infrared range and an optical bandgap of 2.04 eV. Young’s modulus of the a-C:H film was ∼80 GPa. The combination of the low-temperature high-rate deposition of transparent a-C:H films with moderately high Young’s modulus makes the single-beam plasma source attractive for many coatings applications, especially in which heat-sensitive and soft materials are involved. The single-beam plasma source can be configured into a linear structure, which could be used for large-area coatings.
-
A single beam plasma source was used to deposit hydrogenated amorphous carbon (a-C:H) coatings at room temperature. Using methane source gas, a-C:H coatings were deposited at different radio frequency (RF) power to fabricate transparent and durable coatings. The film deposition rate was almost linearly proportional to the ion source power. Hydrogenated amorphous carbon films of ~100 nm thickness appeared to be highly transparent from UV to the infrared range with a transmittance of ~90% and optical bandgap of ~3.7 eV. The coatings also possess desirable mechanical properties with Young’s modulus of ~78 GPa and density of ~1.9 g/cm3. The combined material properties of high transmittance and high durability make the ion-source-deposited a-C:H coatings attractive for many applications.more » « less
-
Elastic broadband antireflection coatings for flexible optics using multi-layered polymer thin filmsFlexible optics and optoelectronic devices require stretchable and compliant antireflection coatings (ARC). Conventional optical coatings, typically inorganic thin films, are brittle and crack under strain, while porous or patterned surfaces often lack environmental endurance and/or involve complex processing. Polymeric optical thin films prepared by initiated chemical vapor deposition (iCVD) comprise a promising alternative class of materials. With iCVD, multilayered, uniform thin film coatings can be synthesized conformally on the surface of a temperature-sensitive substrate near room temperature with precise compositional and thickness control. In this study, a model two-layer coating design consisting of poly(1 H ,1 H ,6 H ,6 H -perfluorohexyl diacrylate) (pPFHDA) with a refractive index at 633 nm of n 633 = 1.426 was deposited atop poly(4-vinylpyridine) (p4VP, n 633 = 1.587). Broadband antireflection over the visible wavelength range (400–750 nm) was conferred to a transparent, flexible thermoplastic polyurethane (TPU) substrate ( n 633 ∼ 1.51), reducing the front-surface reflectance from ∼4% to ∼2%. The superior mechanical compliance of polymer ARCs over conventional inorganic coatings (MgF 2 , SiO 2 , and Al 2 O 3 ) on the TPU substrate was thoroughly investigated by monitoring the evolution of film morphology and tensile fracture with applied equibiaxial strain. The polymer ARC withstood at least ε = 1.64% equibiaxial strain without fracture, while all inorganic coatings cracked. Through a repeated application of strain over hundreds of cycles, the antireflection by the polymer film was shown to possess excellent stability and fatigue resilience. Finally, simulations of established iCVD polymer chemistries possessing larger index contrast revealed that reflectance can be further reduced to <1% or better.more » « less
-
more » « less
Two distinct ultra-thin Ge1−xSnx (x ≤ 0.1) epilayers were deposited on (001) Si substrates at 457 and 313 °C through remote plasma-enhanced chemical vapor deposition. These films are considered potential initiation layers for synthesizing thick epitaxial GeSn films. The GeSn film deposited at 313 °C has a thickness of 10 nm and exhibits a highly epitaxial continuous structure with its lattice being compressed along the interface plane to coherently match Si without mismatch dislocations. The GeSn film deposited at 457 °C exhibits a discrete epitaxial island-like morphology with a peak height of ∼30 nm and full-width half maximum (FWHM) varying from 20 to 100 nm. GeSn islands with an FWHM smaller than 20 nm are defect free, whereas those exceeding 25 nm encompass nanotwins and/or stacking faults. The GeSn islands form two-dimensional modulated superlattice structures at the interface with Si. The GeSn film deposited at 457 °C possesses a lower Sn content compared to the one deposited at lower temperature. The potential impact of using these two distinct ultra-thin layers as initiation layers for the direct growth of thicker GeSn epitaxial films on (001) Si substrates is discussed.
