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This content will become publicly available on June 7, 2024

Title: Selective Area Epitaxy of GaN Nanostructures: MBE Growth and Morphological Analysis
Award ID(s):
2020015
NSF-PAR ID:
10422415
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Crystal Growth & Design
Volume:
23
Issue:
6
ISSN:
1528-7483
Page Range / eLocation ID:
4098 to 4104
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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