Iyer, Vinay, Sheth, Jay, Zhang, Linsheng, Weikle, Robert M., and Bowers, Steven M. A 15.3-dBm, 18.3% PAE F-Band Power Amplifier in 130-nm InP HBT With Modulation Measurements. Retrieved from https://par.nsf.gov/biblio/10422633. IEEE Microwave and Wireless Technology Letters 33.5 Web. doi:10.1109/LMWT.2022.3227755.

Iyer, Vinay, Sheth, Jay, Zhang, Linsheng, Weikle, Robert M., & Bowers, Steven M. A 15.3-dBm, 18.3% PAE F-Band Power Amplifier in 130-nm InP HBT With Modulation Measurements. IEEE Microwave and Wireless Technology Letters, 33 (5). Retrieved from https://par.nsf.gov/biblio/10422633. https://doi.org/10.1109/LMWT.2022.3227755

Iyer, Vinay, Sheth, Jay, Zhang, Linsheng, Weikle, Robert M., and Bowers, Steven M. "A 15.3-dBm, 18.3% PAE F-Band Power Amplifier in 130-nm InP HBT With Modulation Measurements". IEEE Microwave and Wireless Technology Letters 33 (5). Country unknown/Code not available. https://doi.org/10.1109/LMWT.2022.3227755. https://par.nsf.gov/biblio/10422633.

@article{osti_10422633,
place = {Country unknown/Code not available}, title = {A 15.3-dBm, 18.3% PAE F-Band Power Amplifier in 130-nm InP HBT With Modulation Measurements}, url = {https://par.nsf.gov/biblio/10422633}, DOI = {10.1109/LMWT.2022.3227755}, abstractNote = {}, journal = {IEEE Microwave and Wireless Technology Letters}, volume = {33}, number = {5}, author = {Iyer, Vinay and Sheth, Jay and Zhang, Linsheng and Weikle, Robert M. and Bowers, Steven M.}, }