Zhao, Haochen, Lin, Guangyang, Han, Chaoya, Hickey, Ryan, Zhama, Tuofu, Cui, Peng, Deroy, Tienna, Feng, Xu, Ni, Chaoying, and Zeng, Yuping. Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing. Retrieved from https://par.nsf.gov/biblio/10423564. Vacuum 210.C Web. doi:10.1016/j.vacuum.2023.111868.

Zhao, Haochen, Lin, Guangyang, Han, Chaoya, Hickey, Ryan, Zhama, Tuofu, Cui, Peng, Deroy, Tienna, Feng, Xu, Ni, Chaoying, & Zeng, Yuping. Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing. Vacuum, 210 (C). Retrieved from https://par.nsf.gov/biblio/10423564. https://doi.org/10.1016/j.vacuum.2023.111868

Zhao, Haochen, Lin, Guangyang, Han, Chaoya, Hickey, Ryan, Zhama, Tuofu, Cui, Peng, Deroy, Tienna, Feng, Xu, Ni, Chaoying, and Zeng, Yuping. "Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing". Vacuum 210 (C). Country unknown/Code not available. https://doi.org/10.1016/j.vacuum.2023.111868. https://par.nsf.gov/biblio/10423564.

@article{osti_10423564,
place = {Country unknown/Code not available}, title = {Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing}, url = {https://par.nsf.gov/biblio/10423564}, DOI = {10.1016/j.vacuum.2023.111868}, abstractNote = {}, journal = {Vacuum}, volume = {210}, number = {C}, author = {Zhao, Haochen and Lin, Guangyang and Han, Chaoya and Hickey, Ryan and Zhama, Tuofu and Cui, Peng and Deroy, Tienna and Feng, Xu and Ni, Chaoying and Zeng, Yuping}, }