McEwen, Benjamin, Reshchikov, Michael A., Rocco, Emma, Meyers, Vincent, Hogan, Kasey, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., and Shahedipour-Sandvik, Fatemeh. MOCVD Growth and Characterization of Be-Doped GaN. Retrieved from https://par.nsf.gov/biblio/10430051. ACS Applied Electronic Materials 4.8 Web. doi:10.1021/acsaelm.1c01276.

McEwen, Benjamin, Reshchikov, Michael A., Rocco, Emma, Meyers, Vincent, Hogan, Kasey, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., & Shahedipour-Sandvik, Fatemeh. MOCVD Growth and Characterization of Be-Doped GaN. ACS Applied Electronic Materials, 4 (8). Retrieved from https://par.nsf.gov/biblio/10430051. https://doi.org/10.1021/acsaelm.1c01276

McEwen, Benjamin, Reshchikov, Michael A., Rocco, Emma, Meyers, Vincent, Hogan, Kasey, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., and Shahedipour-Sandvik, Fatemeh. "MOCVD Growth and Characterization of Be-Doped GaN". ACS Applied Electronic Materials 4 (8). Country unknown/Code not available. https://doi.org/10.1021/acsaelm.1c01276. https://par.nsf.gov/biblio/10430051.

@article{osti_10430051,
place = {Country unknown/Code not available}, title = {MOCVD Growth and Characterization of Be-Doped GaN}, url = {https://par.nsf.gov/biblio/10430051}, DOI = {10.1021/acsaelm.1c01276}, abstractNote = {}, journal = {ACS Applied Electronic Materials}, volume = {4}, number = {8}, author = {McEwen, Benjamin and Reshchikov, Michael A. and Rocco, Emma and Meyers, Vincent and Hogan, Kasey and Andrieiev, Oleksandr and Vorobiov, Mykhailo and Demchenko, Denis O. and Shahedipour-Sandvik, Fatemeh}, }