skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm
Abstract In this paper, we report, for the first time, a theoretical study on passive photonic devices including optical power splitters/combiners and grating couplers (GCs) operating at non-telecom wavelengths above 2 µ m in a monolithic GaSb platform. Passive components were designed to operate, in particular, at around 2.6 µ m for monolithic integration with active photonic devices on the III–V gallium antimonide material platform. The three popular types of splitters/combiners such as directional couplers, multimode interferometer-, and Y-branch-couplers were theoretically investigated. Based on our optimized design and rigorous analysis, fabrication-compatible 1 × 2 optical power splitters with less than 0.12 dB excess losses, large spectral bandwidth, and a 50:50 splitting ratio are achieved. For fiber-to-chip coupling, we also report the design of GCs with an outcoupling efficiency of ∼29% at 2.56 μ m and a 3 dB bandwidth of 80 nm. The results represent a significant step towards developing a complete functional photonic integrated circuits at mid-wave infrared wavelengths.  more » « less
Award ID(s):
2144375
PAR ID:
10432640
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Journal of Physics: Photonics
Volume:
5
Issue:
3
ISSN:
2515-7647
Page Range / eLocation ID:
035005
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract The transition towards designs which co-package electronic and photonic die together in data center switch packages has created a scaling path to Petabyte per second (Pbps) input/output (I/O) in such systems. In a co-packaged design, the scaling of bandwidth, cost, and energy will be governed by the number of optical I/O channels and the data rate per channel. While optical communication provide an opportunity to exploit wavelength division multiplexing to scale data rate, the limited 127 µm pitch of V-groove based single mode fiber arrays and the use of active alignment and bonding for their packaging present challenges to scaling the number of optical channels. Flip-chip optical couplers which allow for low loss, broadband operation and automated passive assembly represent a solution for continued scaling. In this paper, we propose a novel scheme to vertically couple between silicon based waveguides on separate chips using graded index couplers in combination with an evanescent coupler. Simulation results using a 3D finite-difference time-domain solver are presented, demonstrating coupling losses as low as 0.35 dB for a chip-to-chip gap of 11 µm; 1 dB vertical and lateral alignment tolerances of approximately 2.45 µm and ± 2.66 µm, respectively; and a possible 1 dB bandwidth of greater than 1500 nm. These results demonstrate the potential of our coupler as a universal interface in future co-packaged optics systems. 
    more » « less
  2. The co-packaging of optics and electronics provides a potential path forward to achieving beyond 50 Tbps top of rack switch packages. In a co-packaged design, the scaling of bandwidth, cost, and energy is governed by the number of optical transceivers (TxRx) per package as opposed to transistor shrink. Due to the large footprint of optical components relative to their electronic counterparts, the vertical stacking of optical TxRx chips in a co-packaged optics design will become a necessity. As a result, development of efficient, dense, and wide alignment tolerance chip-to-chip optical couplers will be an enabling technology for continued TxRx scaling. In this paper, we propose a novel scheme to vertically couple into standard 220 nm silicon on insulator waveguides from 220 nm silicon nitride on glass waveguides using overlapping, inverse double tapers. Simulation results using Lumerical’s 3D Finite Difference Time Domain solver are presented, demonstrating insertion losses below -0.13 dB for an inter-chip spacing of 1µm; 1 dB vertical and lateral alignment tolerances of approximately 2.6µm and ± 2.8µm, respectively; a greater than 300 nm 1 dB bandwidth; and 1 dB twist and tilt tolerances of approximately ± 2.3 degrees and 0.4 degrees, respectively. These results demonstrate the potential of our coupler for use in co-packaged designs requiring high performance, high density, CMOS compatible out of plane optical connections. 
    more » « less
  3. Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large χ2 and χ3 optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3 dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we de-multiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications. 
    more » « less
  4. Density-based topology optimization is used to design large-scale, multi-layer grating couplers that comply with commercial foundry fabrication constraints while simultaneously providing beam profiles that efficiently couple to a single-mode optical fiber without additional optics. Specifically, we describe the design process and experimentally demonstrate both single- and dual-polarization grating couplers that couple at normal incidence (0° from the normal) with low backreflections (-13.7 dB and -15.4 dB at the center wavelength), broad 3 dB bandwidths (75 nm and 89 nm), and standard coupling efficiencies (-4.7 dB and -7.0 dB). The dual-polarization grating couplers exhibit over 30 dB of polarization extinction across the entire band. The devices were fabricated on the GlobalFoundries 45CLO CMOS platform and characterized across three separate wafers. This new design approach produces distinct features for multiple foundry layers and yields emitters with arbitrary, user-specified far-field profiles. 
    more » « less
  5. We report on monolithically integrated wavelength cross-connects (WXCs) on an enhanced silicon photonic platform with integrated micro-electro-mechanical-system (MEMS) actuators. An 8 × 8 WXC with 8 wavelength channels comprising 16 echelle gratings and 512 silicon photonic MEMS switches is integrated on a 9.7 mm × 6.7 mm silicon chip. The WXC inherits the fundamental advantages of silicon photonic MEMS space switches, including low loss, broad optical bandwidth, large fabrication tolerance, and simple digital control. The WXC exhibits a low crosstalk of −30 dB, a submicrosecond switching time of 0.7 µs, and on-chip optical insertion losses varying from 8.8 dB to 16.4 dB. To our knowledge, it is the largest channel capacity (64 channels = 8 ports × 8 wavelengths) integrated WXC ever reported. 
    more » « less