The recently discovered kagome superconductors
The class of
- NSF-PAR ID:
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- npj Quantum Materials
- Medium: X
- Sponsoring Org:
- National Science Foundation
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The recently discovered kagome superconductors
AV3Sb5( A= K, Rb, Cs) exhibit unusual charge-density-wave (CDW) orders with time-reversal and rotational symmetry breaking. One of the most crucial unresolved issues is identifying the symmetry of the superconductivity that develops inside the CDW phase. Theory predicts a variety of unconventional superconducting symmetries with sign-changing and chiral order parameters. Experimentally, however, superconducting phase information in AV3Sb5is still lacking. Here we report the impurity effects in CsV3Sb5using electron irradiation as a phase-sensitive probe of superconductivity. Our magnetic penetration depth measurements reveal that with increasing impurities, an anisotropic fully-gapped state changes to an isotropic full-gap state without passing through a nodal state. Furthermore, transport measurements under pressure show that the double superconducting dome in the pressure-temperature phase diagram survives against sufficient impurities. These results support that CsV3Sb5is a non-chiral, anisotropic s-wave superconductor with no sign change both at ambient and under pressure.
The recently discovered kagome net compounds AV3Sb5( A = K, Rb, and Cs) become superconducting on cooling, in addition to displaying interesting topological features in the electronic structure. They also exhibit charge density wave ordering, which manifests as a breathing-mode distortion in the kagome layers. It has been suggested that such ordering derives from nesting between saddle points on the Fermi surface. In aid of the evolving understanding of this intriguing materials class, we present calculations of Fermi surface nesting and Lindhard susceptibility of CsV3Sb5. The breathing mode distortions appear to not display a simple link with Fermi surface nesting (FSN) and do not display the signatures of a Peierls-like transition. The FSN is agnostic to changes along kzand is only mildly impacted by small shifts of the Fermi level. The results suggest that FSN is largely independent of specific features in the saddle point.
Abstract The kagome metals of the family A V 3 Sb 5 , featuring a unique structural motif, harbor an array of intriguing phenomena such as chiral charge order and superconductivity. CsV 3 Sb 5 is of particular interest because it displays a double superconducting dome in the region of the temperature-pressure phase diagram where charge order is still present. However, the microscopic origin of such an unusual behavior remains an unsolved issue. Here, to address it, we combine high-pressure, low-temperature muon spin relaxation/rotation with first-principles calculations. We observe a pressure-induced threefold enhancement of the superfluid density, which also displays a double-peak feature, similar to the superconducting critical temperature. This leads to three distinct regions in the phase diagram, each of which features distinct slopes of the linear relation between superfluid density and the critical temperature. These results are attributed to a possible evolution of the charge order pattern from the superimposed tri-hexagonal Star-of-David phase at low pressures (within the first dome) to the staggered tri-hexagonal phase at intermediate pressures (between the first and second domes). Our findings suggest a change in the nature of the charge-ordered state across the phase diagram of CsV 3 Sb 5 , with varying degrees of competition with superconductivity.more » « less
It has been challenging to synthesize p-type SnOx(1≤x<2) and engineer the electrical properties such as carrier density and mobility due to the narrow processing window and the localized oxygen 2p orbitals near the valence band.
We recently reported on the processing of p-type SnOx and an oxide-based p-n heterostructures, demonstrating high on/off rectification ratio (>103), small turn-on voltage (<0.5 V), and low saturation current (~1×10-10A)1. In order to further understand the p-type oxide and engineer the properties for various electronic device applications, it is important to identify (or establish) the dominating doping and transport mechanisms. The low dopability in p-type SnOx, of which the causation is also closely related to the narrow processing window, needs to be mitigated so that the electrical properties of the material are to be adequately engineered2, 3.
Herein, we report on the multifunctional encapsulation of p-SnOxto limit the surface adsorption of oxygen and selectively permeate hydrogen into the p-SnOxchannel for thin film transistor (TFT) applications. Time-of-flight secondary ion mass spectrometry measurements identified that ultra-thin SiO2as a multifunctional encapsulation layer effectively suppressed the oxygen adsorption on the back channel surface of p-SnOxand augmented hydrogen density across the entire thickness of the channel. Encapsulated p-SnOx-based TFTs demonstrated much-enhanced channel conductance modulation in response to the gate bias applied, featuring higher on-state current and lower off-state current. The relevance between the TFT performance and the effects of oxygen suppression and hydrogen permeation is discussed in regard to the intrinsic and extrinsic doping mechanisms. These results are supported by density-functional-theory calculations.
This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 20011028) by KRISS. K.N. was supported by Basic Science Research Program (NRF-2021R11A1A01051246) through the NRF Korea funded by the Ministry of Education.
Lee, D. H.; Park, H.; Clevenger, M.; Kim, H.; Kim, C. S.; Liu, M.; Kim, G.; Song, H. W.; No, K.; Kim, S. Y.; Ko, D.-K.; Lucietto, A.; Park, H.; Lee, S., High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnOx and n-InGaZnO.
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Yim, K.; Youn, Y.; Lee, M.; Yoo, D.; Lee, J.; Cho, S. H.; Han, S., Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor.
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In the recently discovered kagome metal CsV3Sb5, an intriguing proposal invoking a doped Chern insulator state suggests the presence of small Chern Fermi pockets hosting spontaneous orbital-currents and large orbital magnetic moments. While the net thermodynamic magnetization is nearly insensitive to these moments, due to their antiferromagnetic alignment, their presence can be revealed by the Zeeman effect, which shifts electron energies in magnetic fields with a proportionality given by the effective
g−factor. Here, we determine the g-factor using the spin-zero effect in magnetic quantum oscillations. A large g-factor enhancement is visible only in magnetic breakdown orbits between conventional and concentrated Berry curvature Fermi pockets that host large orbital moments. Such Berry-curvature-generated large orbital moments are almost always concealed by other effects. In this system, however, magnetic breakdown orbits due to the proximity to a conventional Fermi-surface section allow them to be visibly manifested in magnetic quantum oscillations. Our results provide a remarkable example of the interplay between electronic correlations and more conventional electronic bands in quantum materials.