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   Siegler, Timothy D.; Houck, Daniel W.; Cho, Shin Hum; Milliron, Delia J.; Korgel, Brian A. (December 2018, The Journal of Physical Chemistry C)
2. High Mobility Two-Dimensional Electron Gas at the BaSnO ₃ /SrNbO ₃ Interface

   https://doi.org/10.1021/acsami.2c12195  

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3. High-temperature surface state in Kondo insulator U ₃ Bi ₄ Ni ₃

   https://doi.org/10.1126/sciadv.adq9952  

   Broyles, Christopher; Wan, Xiaohan; Cheng, Wenting; Wu, Dingsong; Tan, Hengxin; Xu, Qiaozhi; Gould, Shannon L; Siddiquee, Hasan; Xiao, Leyan; Chen, Ryan; et al (March 2025, Science Advances)

   The resurgence of interest in Kondo insulators has been driven by two major mysteries: the presence of metallic surface states and the observation of quantum oscillations. To further explore these mysteries, it is crucial to investigate another similar system beyond the two existing ones, SmB₆and YbB₁₂. Here, we address this by reporting on a Kondo insulator, U₃Bi₄Ni₃. Our transport measurements reveal that a surface state emerges below 250 kelvin and dominates transport properties below 150 kelvin, which is well above the temperature scale of SmB₆and YbB₁₂. At low temperatures, the surface conductivity is about one order of magnitude higher than the bulk. The robustness of the surface state indicates that it is inherently protected. The similarities and differences between U₃Bi₄Ni₃and the other two Kondo insulators will provide valuable insights into the nature of metallic surface states in Kondo insulators and their interplay with strong electron correlations. 

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4. High Current Density SmTiO ₃ /SrTiO ₃ Field-Effect Transistors

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   Chandrasekar, Hareesh; Ahadi, Kaveh; Razzak, Towhidur; Stemmer, Susanne; Rajan, Siddharth (January 2020, ACS Applied Electronic Materials)

   null (Ed.)
5. Stability of the Y ₂ O ₃ –SiO ₂ system in high‐temperature, high‐velocity water vapor

   https://doi.org/10.1111/jace.16915  

   Parker, Cory G; Opila, Elizabeth J (April 2020, Journal of the American Ceramic Society)

   Abstract High‐temperature, high‐velocity water vapor (steam‐jet) exposures were conducted on Y₂O₃, Y₂SiO₅, Y₂Si₂O₇, and SiO₂for 60 hours at 1400°C. Volatility of Y₂O₃was not observed. Phase‐pure Y₂SiO₅exhibited SiO₂loss forming Y₂O₃and porosity. A mixed porous and dense Y₂SiO₅layer formed on the surface of Y₂Si₂O₇due to SiO₂depletion. The mechanisms and kinetics of the reaction between SiO₂and H₂O(g) to form Si(OH)₄(g) from Y₂SiO₅, Y₂Si₂O₇, and SiO₂are discussed. 

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