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Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising route to advance microwave and power electronics with nitride semiconductors. The electron mobility in thin GaN quantum wells embedded in AlN is limited by high internal electric field and the presence of undesired polarization-induced two-dimensional hole gases (2DHGs). To enhance the electron mobility in such heterostructures on AlN, previous efforts have resorted to thick, relaxed GaN channels with dislocations. In this work, we introduce n-type compensation δ-doping in a coherently strained single-crystal (Xtal) AlN/GaN/AlN heterostructure to counter the 2DHG formation at the GaN/AlN interface, and simultaneously lower the internal electric field in the well. This approach yields a δ-doped XHEMT structure with a high 2DEG density of ∼3.2×1013 cm−2 and a room temperature (RT) mobility of ∼855 cm2/Vs, resulting in the lowest RT sheet resistance 226.7 Ω/□ reported to date in coherently strained AlN/GaN/AlN HEMT heterostructures on the AlN platform.
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High electron mobility in AlN:Si by point and extended defect management
High room temperature n-type mobility, exceeding 300 cm 2 /Vs, was demonstrated in Si-doped AlN. Dislocations and C N −1 were identified as the main compensators for AlN grown on sapphire and AlN single crystalline substrates, respectively, limiting the lower doping limit and mobility. Once the dislocation density was reduced by the growth on AlN wafers, C-related compensation could be reduced by controlling the process supersaturation and Fermi level during growth. While the growth on sapphire substrates supported only high doping ([Si] > 5 × 10 18 cm −3 ) and low mobility (∼20 cm 2 /Vs), growth on AlN with proper compensation management enabled controlled doping at two orders of magnitude lower dopant concentrations. This work is of crucial technological importance because it enables the growth of drift layers for AlN-based power devices.
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- PAR ID:
- 10437295
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 132
- Issue:
- 18
- ISSN:
- 0021-8979
- Page Range / eLocation ID:
- 185703
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1063/5.0124589
