High-spectral-purity frequency-agile room-temperature sources in the terahertz spectrum are foundational elements for imaging, sensing, metrology, and communications. Here we present a chip-scale optical parametric oscillator based on an integrated nonlinear microresonator that provides broadly tunable single-frequency and multi-frequency oscillators in the terahertz regime. Through optical-to-terahertz down-conversion using a plasmonic nanoantenna array, coherent terahertz radiation spanning 2.8-octaves is achieved from 330 GHz to 2.3 THz, with ≈20 GHz cavity-mode-limited frequency tuning step and ≈10 MHz intracavity-mode continuous frequency tuning range at each step. By controlling the microresonator intracavity power and pump-resonance detuning, tunable multi-frequency terahertz oscillators are also realized. Furthermore, by stabilizing the microresonator pump power and wavelength, sub-100 Hz linewidth of the terahertz radiation with 10−15residual frequency instability is demonstrated. The room-temperature generation of both single-frequency, frequency-agile terahertz radiation and multi-frequency terahertz oscillators in the chip-scale platform offers unique capabilities in metrology, sensing, imaging and communications.
A two-mode squeezed microresonator-based frequency comb is demonstrated with CMOS-compatible silicon nitride integrated photonic circuits. Seventy quantum modes, in a span of 1.3 THz, are generated in an integrated Kerr microresonator at telecommunication wavelengths.
more » « less- NSF-PAR ID:
- 10440013
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optica
- Volume:
- 10
- Issue:
- 8
- ISSN:
- 2334-2536
- Format(s):
- Medium: X Size: Article No. 1100
- Size(s):
- Article No. 1100
- Sponsoring Org:
- National Science Foundation
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Microresonator frequency combs, or microcombs, have gained wide appeal for their rich nonlinear physics and wide range of applications. Stoichiometric silicon nitride films grown via low-pressure chemical vapor deposition (LPCVD), in particular, are widely used in chip-integrated Kerr microcombs. Critical to such devices is the ability to control the microresonator dispersion, which has contributions from both material refractive index dispersion and geometric confinement. Here, we show that modifications to the ratio of the gaseous precursors in LPCVD growth have a significant impact on material dispersion and hence the overall microresonator dispersion. In contrast to the many efforts focused on comparisons between Si-rich films and stoichiometric (
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