Conventional time-of-flight methods can be used to determine carrier mobilities for photovoltaic cells in which the transit time between electrodes is greater than the RC time constant of the device. To measure carrier drift on sub-ns timescales, we have recently developed a two-pulse time-of-flight technique capable of detecting drift velocities with 100-ps time resolution in perovskite materials. In this method, the rates of carrier transit across the active layer of a device are determined by varying the delay time between laser pulses and measuring the magnitude of the recombination-induced nonlinearity in the photocurrent. Here, we present a related experimental approach in which diffractive optic-based transient grating spectroscopy is combined with our two-pulse time-of-flight technique to simultaneously probe drift and diffusion in orthogonal directions within the active layer of a photovoltaic cell. Carrier density gratings are generated using two time-coincident pulse-pairs with passively stabilized phases. Relaxation of the grating amplitude associated with the first pulse-pair is detected by varying the delay and phase of the density grating corresponding to the second pulse-pair. The ability of the technique to reveal carrier diffusion is demonstrated with model calculations and experiments conducted using MAPbI3 photovoltaic cells.
more »
« less
Probing drift velocity dispersion in MAPbI3 photovoltaic cells with nonlinear photocurrent spectroscopy
Conventional time-of-flight (TOF) measurements yield charge carrier mobilities in photovoltaic cells with time resolution limited by the RC time constant of the device, which is on the order of 0.1–1 µs for the systems targeted in the present work. We have recently developed an alternate TOF method, termed nonlinear photocurrent spectroscopy (NLPC), in which carrier drift velocities are determined with picosecond time resolution by applying a pair of laser pulses to a device with an experimentally controlled delay time. In this technique, carriers photoexcited by the first laser pulse are “probed” by way of recombination processes involving carriers associated with the second laser pulse. Here, we report NLPC measurements conducted with a simplified experimental apparatus in which synchronized 40 ps diode lasers enable delay times up to 100 µs at 5 kHz repetition rates. Carrier mobilities of ∼0.025 cm2/V/s are determined for MAPbI3 photovoltaic cells with active layer thicknesses of 240 and 460 nm using this instrument. Our experiments and model calculations suggest that the nonlinear response of the photocurrent weakens as the carrier densities photoexcited by the first laser pulse trap and broaden while traversing the active layer of a device. Based on this aspect of the signal generation mechanism, experiments conducted with co-propagating and counter-propagating laser beam geometries are leveraged to determine a 60 nm length scale of drift velocity dispersion in MAPbI3 films. Contributions from localized states induced by thermal fluctuations are consistent with drift velocity dispersion on this length scale.
more »
« less
- Award ID(s):
- 1763207
- PAR ID:
- 10440026
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- The Journal of Chemical Physics
- Volume:
- 157
- Issue:
- 17
- ISSN:
- 0021-9606
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Coexistence of excitons and free charge carriers can complicate conventional spectroscopic studies of transport mechanisms in layered perovskite solar cells. Because of their large concentrations and absorbance cross sections, excitons tend to dominate spectroscopic signals and obscure observations of free charges in this class of systems. To investigate the effects of interstitial organic molecules on charge transport in photovoltaic devices, we apply a newly developed four-pulse transient grating method with photocurrent detection to layered perovskites possessing a range of quantum well thicknesses. In this method, a phase-stabilized “pump” pulse-pair photoexcites a carrier density grating in the active layer of a photovoltaic cell, whereas transport is time-resolved using the carrier density grating generated by a subsequent “probe” pulse-pair. Carrier diffusion mechanisms are revealed by measuring the recombination-induced nonlinear response of the device while varying the delay between pulse-pairs and phase difference between density gratings. Like drift velocity dispersion, our data suggest that encounters with inorganic–organic interfaces broaden the range of diffusivities in addition to skewing the distributions toward slower transit times. Rather than tunneling through the potential energy barriers associated with the organic material, the experimental measurements support a physical picture in which the photoexcited carriers traverse circuitous paths through the active layer while occupying the phases of the thickest quantum wells.more » « less
-
Mixtures of layered perovskite quantum wells with different sizes form prototypical light-harvesting antenna structures in solution-processed films. Gradients in the bandgaps and energy levels are established by concentrating the smallest and largest quantum wells near opposing electrodes in photovoltaic devices. Whereas short-range energy and charge carrier funneling behaviors have been observed in layered perovskites, our recent work suggests that such light-harvesting processes do not assist long-range charge transport due to carrier trapping at interfaces between quantum wells and interstitial organic spacer molecules. Here, we apply a two-pulse time-of-flight technique to a family of layered perovskite systems to explore the effects that interstitial organic molecules have on charge carrier dynamics. In these experiments, the first laser pulse initiates carrier drift within the active layer of a photovoltaic device, whereas the second pulse probes the transient concentrations of photoexcited carriers as they approach the electrodes. The instantaneous drift velocities determined with this method suggest that the rates of trap-induced carrier deceleration increase with the concentrations of organic spacer cations. Overall, our experimental results and model calculations suggest that the layered perovskite device efficiencies primarily reflect the dynamics of carrier trapping at interfaces between quantum wells and interstitial organic phases.more » « less
-
Abstract Gate‐/wavelength‐dependent scanning photocurrent measurements of black phosphorous (BP)–MoS2heterojunctions have shown that the Schottky barrier at the MoS2–metal interface plays an important role in the photoresponse dynamics of the heterojunction. When the Fermi level is close to the conduction band of MoS2, photoexcited carriers can tunnel through the narrow depletion region at the MoS2–metal interface, leading to a short response time of 13 µs regardless of the incident laser wavelength. This response speed is comparable or better than that of other few‐layer BP–MoS2heterojunctions. Conversely, when the MoS2channel is in the off‐state, the resulting sizeable Schottky barrier and depletion width make it difficult for photoexcited carriers to overcome the barrier. This significantly delays the carrier transit time and thus the photoresponse speed, leading to a wavelength‐dependent response time since the photoexcited carriers induced by short wavelength photons have a higher probability to overcome the Schottky barrier at the MoS2–metal interface than long wavelength photons. These studies not only shed light on the fundamental understanding of photoresponse dynamics in BP–MoS2heterojunctions, but also open new avenues for engineering the interfaces between 2D materials and metal contacts to reduce the response time of 2D optoelectronics.more » « less
-
Germanium sulfide (GeS) and germanium selenide (GeSe) are layered 2D van der Waals materials that belong to a family of group-IV monochalcogenides. These semiconductors have high carrier mobilities and moderate band gaps in the near infrared. Additionally, we have demonstrated that above gap photoexcitation results in ultrafast surface photocurrents and emission of THz pulses due to a spontaneous ferroelectric polarization that breaks inversion symmetry in the monolayer. Beyond the sub-picosecond time scales of shift currents, photoexcited carriers in both materials result in long-lived transient conductivity. We find that 800 nm excitation results in longer lived free photocarriers, persisting for hundreds of picoseconds to several nanoseconds, compared to tens to hundreds of picoseconds lifetimes for 400 nm excitation. Here, we report on tailoring the free photoexcited carrier lifetimes by intercalation of zero-valent Cu into the van der Waals gaps of GeS and GeSe. Density functional theory calculations predict that Cu atoms introduce mid-gap states. We demonstrate that intercalating only ∼3 atomic % of zero-valent Cu reduces the carrier lifetime by as much as two-to-four-fold, raising the prospects of these materials being used for high-speed optoelectronics.more » « less
An official website of the United States government
