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We report the in situ, direct epitaxial synthesis of (0001)-oriented PdCoO2 thin films on c-plane sapphire using ozone-assisted molecular-beam epitaxy. The resulting films have smoothness, structural perfection, and electrical characteristics that rival the best in situ grown PdCoO2 thin films in the literature. Metallic conductivity is observed in PdCoO2 films as thin as ∼2.0 nm. The PdCoO2 films contain 180° in-plane rotation twins. Scanning transmission electron microscopy reveals that the growth of PdCoO2 on the (0001) surface of Al2O3 begins with the CoO2 layer.
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Surface oxidation of hydrophobic ZnSe for enhanced growth of atomic layer deposited aluminum oxide
The growth of atomic layer deposited (ALD) Al2O3 on planar ZnSe substrates is studied using in situ spectroscopic ellipsometry. An untreated ZnSe surface requires an incubation period of 27 cycles of ALD Al2O3 before film growth is observed. Pretreating the surface with an ultraviolet generated ozone lowers the incubation to 17 cycles, whereas a plasma-enhanced ALD Al2O3 process can further lower the incubation period to 13 cycles. The use of ozone or plasma-activated oxygen species on ZnSe is found to create ZnO and SeO2, which are responsible for converting ZnSe from a hydrophobic to a hydrophilic surface. The interfacial layer between Al2O3 and ZnSe is mapped using high-resolution transmission electron microscopy and scanning transmission electron microscopy/energy dispersive spectroscopy. SeO2 is volatile and leaves a zinc-rich interface, which is 4.3 nm thick for the ultraviolet generated ozone pretreated sample and 2.5 nm for the plasma-enhanced ALD process.
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- Award ID(s):
- 1908167
- PAR ID:
- 10440332
- Publisher / Repository:
- American Vacuum Society
- Date Published:
- Journal Name:
- Journal of Vacuum Science & Technology A
- Volume:
- 40
- Issue:
- 5
- ISSN:
- 0734-2101
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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