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Title: Improving crystal quality of β -phase MgGaO thin films by using low-temperature homo-buffer layer
Ultra-wide bandgap (UWBG) semiconductors are promising for many applications, such as power electronics and deep-ultraviolet photonics. In this research, UWBG β-phase magnesium gallium oxide (MgGaO) thin films with a bandgap of 5.1 eV were grown using low-temperature homo-buffer layers in a plasma-assisted molecular beam epitaxy system. The role of the growth temperature and thickness of low-temperature buffer layer on the quality of the active layer was studied using x-ray diffraction and transmission electron microscopy and by analyzing the properties of metal–semiconductor–metal photodetector devices based on these films. It is found that lower buffer growth temperature at 300 °C leads to higher crystal quality of active layer. For the same low buffer growth temperature, different crystal quality in the active layer is attained with different buffer layer thickness. A buffer layer thickness at 40 nm has the best active layer quality with the highest photo current under 265 nm illumination and long decay time as a result of reduced recombination of photo-generated carriers through fewer defects in the active layer.  more » « less
Award ID(s):
2105566
NSF-PAR ID:
10416109
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
122
Issue:
21
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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