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Abstract In this work, we explore how the optical properties of isotropic materials can be modulated by adjacent anisotropic materials, providing new insights into anisotropic light-matter interactions in van der Waals heterostructures. Using a WS2/ReS2heterostructure, we systematically investigated the excitation angle-dependent photoluminescence (PL), differential reflectance, time-resolved PL, and power-dependent PL anisotropy of WS2. Our findings reveal that the anisotropic optical response of WS2, influenced by the crystallographically low symmetry and unique dielectric environment of ReS2, significantly impacts both the optical and temporal behavior of WS2. We observed that the emission anisotropy increases with optical power density, highlighting that anisotropic localization of photo-generated carriers and subsequent charge transfer dynamics are key contributors to the polarization-sensitive optical response. These findings provide a framework for leveraging optical density-sensitive anisotropy mirroring to design advanced anisotropic optoelectronic and photonic devices.
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Charge Transfer Modulation in Vanadium‐Doped WS 2 /Bi 2 O 2 Se Heterostructures
Abstract The field of photovoltaics is revolutionized in recent years by the development of two–dimensional (2D) type‐II heterostructures. These heterostructures are made up of two different materials with different electronic properties, which allows for the capture of a broader spectrum of solar energy than traditional photovoltaic devices. In this study, the potential of vanadium (V)‐doped WS2is investigated, hereafter labeled V‐WS2, in combination with air‐stable Bi2O2Se for use in high‐performance photovoltaic devices. Various techniques are used to confirm the charge transfer of these heterostructures, including photoluminescence (PL) and Raman spectroscopy, along with Kelvin probe force microscopy (KPFM). The results show that the PL is quenched by 40%, 95%, and 97% for WS2/Bi2O2Se, 0.4 at.% V‐WS2/Bi2O2Se, and 2 at.% V‐WS2/Bi2O2Se, respectively, indicating a superior charge transfer in V‐WS2/Bi2O2Se compared to pristine WS2/Bi2O2Se. The exciton binding energies for WS2/Bi2O2Se, 0.4 at.% V‐WS2/Bi2O2Se and 2 at.% V‐WS2/Bi2O2Se heterostructures are estimated to be ≈130, 100, and 80 meV, respectively, which is much lower than that for monolayer WS2. These findings confirm that by incorporating V‐doped WS2, charge transfer in WS2/Bi2O2Se heterostructures can be tuned, providing a novel light‐harvesting technique for the development of the next generation of photovoltaic devices based on V‐doped transition metal dichalcogenides (TMDCs)/Bi2O2Se.
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- Award ID(s):
- 2122044
- PAR ID:
- 10442093
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Small
- Volume:
- 19
- Issue:
- 41
- ISSN:
- 1613-6810
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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