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Title: Vacuum Annealed β -Ga 2 O 3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage
Award ID(s):
2019749
PAR ID:
10444744
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
IEEE Electron Device Letters
Volume:
43
Issue:
12
ISSN:
0741-3106
Page Range / eLocation ID:
2029 to 2032
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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