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Title: Rapid Growth of Monolayer MoSe 2 Films for Large‐Area Electronics
Abstract

The large‐scale growth of semiconducting thin films on insulating substrates enables batch fabrication of atomically thin electronic and optoelectronic devices and circuits without film transfer. Here an efficient method to achieve rapid growth of large‐area monolayer MoSe2films based on spin coating of Mo precursor and assisted by NaCl is reported. Uniform monolayer MoSe2films up to a few inches in size are obtained within a short growth time of 5 min. The as‐grown monolayer MoSe2films are of high quality with large grain size (up to 120 µm). Arrays of field‐effect transistors are fabricated from the MoSe2films through a photolithographic process; the devices exhibit high carrier mobility of ≈27.6 cm2V–1s–1and on/off ratios of ≈105. The findings provide insight into the batch production of uniform thin transition metal dichalcogenide films and promote their large‐scale applications.

 
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Award ID(s):
1838456 1542707 1905045
NSF-PAR ID:
10450898
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Electronic Materials
Volume:
7
Issue:
6
ISSN:
2199-160X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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