Thomas, Sidharth, Razavian, Sam, Sun, Wei, Motlagh, Benyamin Fallahi, Kim, Anthony D., Wu, Yu, Williams, Benjamin S., and Babakhani, Aydin. A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS. Retrieved from https://par.nsf.gov/biblio/10453127. IEEE Journal of Solid-State Circuits 58.9 Web. doi:10.1109/JSSC.2023.3289129.

Thomas, Sidharth, Razavian, Sam, Sun, Wei, Motlagh, Benyamin Fallahi, Kim, Anthony D., Wu, Yu, Williams, Benjamin S., & Babakhani, Aydin. A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS. IEEE Journal of Solid-State Circuits, 58 (9). Retrieved from https://par.nsf.gov/biblio/10453127. https://doi.org/10.1109/JSSC.2023.3289129

Thomas, Sidharth, Razavian, Sam, Sun, Wei, Motlagh, Benyamin Fallahi, Kim, Anthony D., Wu, Yu, Williams, Benjamin S., and Babakhani, Aydin. "A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS". IEEE Journal of Solid-State Circuits 58 (9). Country unknown/Code not available. https://doi.org/10.1109/JSSC.2023.3289129. https://par.nsf.gov/biblio/10453127.

@article{osti_10453127,
place = {Country unknown/Code not available}, title = {A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS}, url = {https://par.nsf.gov/biblio/10453127}, DOI = {10.1109/JSSC.2023.3289129}, abstractNote = {}, journal = {IEEE Journal of Solid-State Circuits}, volume = {58}, number = {9}, author = {Thomas, Sidharth and Razavian, Sam and Sun, Wei and Motlagh, Benyamin Fallahi and Kim, Anthony D. and Wu, Yu and Williams, Benjamin S. and Babakhani, Aydin}, }