An official website of the United States government
Abstract BaTiO3is a technologically relevant material in the perovskite oxide class with above‐room‐temperature ferroelectricity and a very large electro‐optical coefficient, making it highly suitable for emerging electronic and photonic devices. An easy, robust, straightforward, and scalable growth method is required to synthesize epitaxial BaTiO3thin films with sufficient control over the film's stoichiometry to achieve reproducible thin film properties. Here the growth of BaTiO3thin films by hybrid molecular beam epitaxy is reported. A self‐regulated growth window is identified using complementary information obtained from reflection high energy electron diffraction, the intrinsic film lattice parameter, film surface morphology, and scanning transmission electron microscopy. Subsequent optical characterization of the BaTiO3films by spectroscopic ellipsometry revealed refractive index and extinction coefficient values closely resembling those of stoichiometric bulk BaTiO3crystals for films grown inside the growth window. Even in the absence of a lattice parameter change of BaTiO3thin films, degradation of optical properties is observed, accompanied by the appearance of a wide optical absorption peak in the IR spectrum, attributed to optical transitions involving defect states present. Therefore, the optical properties of BaTiO3can be utilized as a much finer and more straightforward probe to determine the stoichiometry level present in BaTiO3films.
more »
« less
Full Control of Polarization in Ferroelectric Thin Films Using Growth Temperature to Modulate Defects
Abstract Deterministic control of the intrinsic polarization state of ferroelectric thin films is essential for device applications. Independently of the well‐established role of electrostatic boundary conditions and epitaxial strain, the importance of growth temperature as a tool to stabilize a target polarization state during thin film growth is shown here. Full control of the intrinsic polarization orientation of PbTiO3thin films is demonstrated—from monodomain up, through polydomain, to monodomain down as imaged by piezoresponse force microscopy—using changes in the film growth temperature. X‐ray diffraction and scanning transmission electron microscopy reveal a variation ofc‐axis related to out‐of‐plane strain gradients. These measurements, supported by Ginzburg–Landau–Devonshire free energy calculations and Rutherford backscattering spectroscopy, point to a defect mediated polarization gradient initiated by a temperature dependent effective built‐in field during growth, allowing polarization control not only under specific growth conditions, but ex‐situ, for subsequent processing and device applications.
more »
« less
- Award ID(s):
- 1708615
- PAR ID:
- 10454255
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 6
- Issue:
- 12
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract This work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO3orthoferrite thin films with different Lu/Fe ratios. LuFeO3thin films are grown by pulsed laser deposition on SrTiO3substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO3is antiferromagnetic with a weak canted moment perpendicular to the film plane. Piezoresponse force microscopy imaging and switching spectroscopy reveal room temperature ferroelectricity in Lu‐rich and Fe‐rich films, whereas the stoichiometric film shows little polarization. Ferroelectricity in Lu‐rich films is present for a range of deposition conditions and crystallographic orientations. Positive‐up‐negative‐down ferroelectric measurements on a Lu‐rich film yield ≈13 µC cm−2of switchable polarization, although the film also shows electrical leakage. The ferroelectric response is attributed to antisite defects analogous to that of Y‐rich YFeO3, yielding multiferroicity via defect engineering in a rare earth orthoferrite.more » « less
-
Abstract The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO 3 thin films. Theoretical calculations predict the key role of the BaTiO 3 /PrScO 3 $${({{{{{\boldsymbol{110}}}}}})}_{{{{{{\bf{O}}}}}}}$$ ( 110 ) O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.more » « less
-
Abstract Strong coupling between polarization (P) and strain (ɛ) in ferroelectric complex oxides offers unique opportunities to dramatically tune their properties. Here colossal strain tuning of ferroelectricity in epitaxial KNbO3thin films grown by sub‐oxide molecular beam epitaxy is demonstrated. While bulk KNbO3exhibits three ferroelectric transitions and a Curie temperature (Tc) of ≈676 K, phase‐field modeling predicts that a biaxial strain of as little as −0.6% pushes itsTc> 975 K, its decomposition temperature in air, and for −1.4% strain, toTc> 1325 K, its melting point. Furthermore, a strain of −1.5% can stabilize a single phase throughout the entire temperature range of its stability. A combination of temperature‐dependent second harmonic generation measurements, synchrotron‐based X‐ray reciprocal space mapping, ferroelectric measurements, and transmission electron microscopy reveal a single tetragonal phase from 10 K to 975 K, an enhancement of ≈46% in the tetragonal phase remanent polarization (Pr), and a ≈200% enhancement in its optical second harmonic generation coefficients over bulk values. These properties in a lead‐free system, but with properties comparable or superior to lead‐based systems, make it an attractive candidate for applications ranging from high‐temperature ferroelectric memory to cryogenic temperature quantum computing.more » « less
-
Abstract While induced spin polarization of a palladium (Pd) overlayer on antiferromagnetic and magneto-electric Cr2O3(0001) is possible because of the boundary polarization at the Cr2O3(0001), in the single domain state, the Pd thin film appears to be ferromagnetic on its own, likely as a result of strain. In the conduction band, we find the experimental evidence of ferromagnetic spin polarized in Pd thin films on a Cr2O3(0001) single crystal, especially in the thin limit, Pd thickness of around 1–4 nm. Indeed there is significant spin polarization in 10 Å thick Pd films on Cr2O3(0001) at 310 K, i.e. above the Néel temperature of bulk Cr2O3. While Cr2O3(0001) has surface moments that tend to align along the surface normal, for Pd on Cr2O3, the spin polarization contains an in-plane component. Strain in the Pd adlayer on Cr2O3(0001) appears correlated to the spin polarization measured in spin polarized inverse photoemission spectroscopy. Further evidence for magnetization of Pd on Cr2O3is provided by measurement of the exchange bias fields in Cr2O3/Pd(buffer)/[Co/Pd]nexchange bias systems. The magnitude of the exchange bias field is, over a wide temperature range, virtually unaffected by the Pd thickness variation between 1 and 2 nm.more » « less
