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Abstract Tailoring the doping of semiconductors in heterojunction solar cells shows tremendous success in enhancing the performance of many types of inorganic solar cells, while it is found challenging in perovskite solar cells because of the difficulty in doping perovskites in a controllable way. Here, a small molecule of 4,4′,4″,4″′‐(pyrazine‐2,3,5,6‐tetrayl) tetrakis (N,N‐bis(4‐methoxyphenyl) aniline) (PT‐TPA) which can effectively p‐dope the surface of FAxMA1−xPbI3(FA: HC(NH2)2; MA: CH3NH3) perovskite films is reported. The intermolecular charge transfer property of PT‐TPA forms a stabilized resonance structure to accept electrons from perovskites. The doping effect increases perovskite dark conductivity and carrier concentration by up to 4737 times. Computation shows that electrons in the first two layers of octahedral cages in perovskites are transferred to PT‐TPA. After applying PT‐TPA into perovskite solar cells, the doping‐induced band bending in perovskite effectively facilitates hole extraction to hole transport layer and expels electrons toward cathode side, which reduces the charge recombination there. The optimized devices demonstrate an increased photovoltage from 1.12 to 1.17 V and an efficiency of 23.4% from photocurrent scanning with a stabilized efficiency of 22.9%. The findings demonstrate that molecular doping is an effective route to control the interfacial charge recombination in perovskite solar cells which is in complimentary to broadly applied defect passivation techniques.
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X‐Ray Microscopy of Halide Perovskites: Techniques, Applications, and Prospects
Abstract X‐ray microscopy can provide unique chemical, electronic, and structural insights into perovskite materials and devices leveraging bright, tunable synchrotron X‐ray sources. Over the last decade, fundamental understanding of halide perovskites and their impressive performance in optoelectronic devices has been furthered by rigorous research regarding their structural and chemical properties. Herein, studies of perovskites are reviewed that have used X‐ray imaging, spectroscopy, and scattering microscopies that have proven valuable tools toward understanding the role of defects, impurities, and processing on perovskite material properties and device performance. Together these microscopic investigations have augmented the understanding of the internal workings of perovskites and have helped to steer the perovskite community toward promising directions. In many ways, X‐ray microscopy of perovskites is still in its infancy, which leaves many exciting paths unexplored including new ptychographic, multimodal, in situ, and operando experiments. To explore possibilities, pioneering X‐ray microscopy along these lines is briefly highlighted from other semiconductor systems including silicon, CdTe, GaAs, CuInxGa1−xSe2, and organic photovoltaics. An overview is provided on the progress made in utilizing X‐ray microscopy for perovskites and present opportunities and challenges for future work.
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- Award ID(s):
- 1848371
- PAR ID:
- 10456580
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Energy Materials
- Volume:
- 10
- Issue:
- 26
- ISSN:
- 1614-6832
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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