skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Single crystal growth of CoTi 2 O 5 by solid state reaction synthesis
Abstract Materials in single crystal form are often sought after because the absence of grain boundaries can result in unique properties relative to the polycrystal, but producing these materials is typically a slow and complex process. In this work, pseudo single crystals of the pseudobrookite compound CoTi2O5were synthesized by solid‐state reaction from a duplex grain mixture of CoTiO3and TiO2. The size of the crystallites was >250 µm. The transformation and subsequent microstructural evolution of the CoTi2O5was studied by scanning electron microscopy (SEM), electron backscatter diffraction (EBSD), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), and X‐ray diffraction (XRD). A novel growth mechanism was identified whereby a single crystal CoTi2O5front advances simultaneously along multiple CoTiO3/TiO2diphasic boundaries. The single crystal domains were composed of subgrains approximately 5 µm in diameter; differences in the subgrain size and misorientation were related to the growth mechanism and the initial grain size of the duplex CoTiO3–TiO2mixture. CoTi2O5is a little characterized compound, and this study represents the most significant microstructural study of CoTi2O5to date. The findings may be applied to similar pseudobrookite compounds such as MgTi2O5and Al2TiO5 more » « less
Award ID(s):
1507955
PAR ID:
10459905
Author(s) / Creator(s):
 ;  ;  ;  
Publisher / Repository:
Wiley-Blackwell
Date Published:
Journal Name:
Journal of the American Ceramic Society
Volume:
102
Issue:
9
ISSN:
0002-7820
Page Range / eLocation ID:
p. 5050-5062
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract Oxide solid electrolytes (OSEs) have the potential to achieve improved safety and energy density for lithium-ion batteries, but their high grain-boundary (GB) resistance generally is a bottleneck. In the well-studied perovskite oxide solid electrolyte, Li3xLa2/3-xTiO3(LLTO), the ionic conductivity of grain boundaries is about three orders of magnitude lower than that of the bulk. In contrast, the related Li0.375Sr0.4375Ta0.75Zr0.25O3(LSTZ0.75) perovskite exhibits low grain boundary resistance for reasons yet unknown. Here, we use aberration-corrected scanning transmission electron microscopy and spectroscopy, along with an active learning moment tensor potential, to reveal the atomic scale structure and composition of LSTZ0.75 grain boundaries. Vibrational electron energy loss spectroscopy is applied for the first time to reveal atomically resolved vibrations at grain boundaries of LSTZ0.75 and to characterize the otherwise unmeasurable Li distribution therein. We find that Li depletion, which is a major reason for the low grain boundary ionic conductivity of LLTO, is absent for the grain boundaries of LSTZ0.75. Instead, the low grain boundary resistivity of LSTZ0.75 is attributed to the formation of a nanoscale defective cubic perovskite interfacial structure that contained abundant vacancies. Our study provides new insights into the atomic scale mechanisms of low grain boundary resistivity. 
    more » « less
  2. Abstract A BiFeO3film is grown epitaxially on a PrScO3single crystal substrate which imparts ~ 1.45% of biaxial tensile strain to BiFeO3resulting from lattice misfit. The biaxial tensile strain effect on BiFeO3is investigated in terms of crystal structure, Poisson ratio, and ferroelectric domain structure. Lattice resolution scanning transmission electron microscopy, precession electron diffraction, and X-ray diffraction results clearly show that in-plane interplanar distance of BiFeO3is the same as that of PrScO3with no sign of misfit dislocations, indicating that the biaxial tensile strain caused by lattice mismatch between BiFeO3and PrScO3are stored as elastic energy within BiFeO3film. Nano-beam electron diffraction patterns compared with structure factor calculation found that the BiFeO3maintains rhombohedral symmetry, i.e., space group ofR3c. The pattern analysis also revealed two crystallographically distinguishable domains. Their relations with ferroelectric domain structures in terms of size and spontaneous polarization orientations within the domains are further understood using four-dimensional scanning transmission electron microscopy technique. 
    more » « less
  3. Epitaxial growth of κ-phase Ga 2 O 3 thin films is investigated on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition. The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure κ-Ga 2 O 3 films are successfully grown on GaN-, AlN-on-sapphire, and YSZ substrates through a systematical tuning of growth parameters including the precursor molar flow rates, chamber pressure, and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of β- and κ-polymorphs of Ga 2 O 3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology, and roughness of κ-Ga 2 O 3 films grown on different substrates are investigated as a function of precursor flow rate. High-resolution scanning transmission electron microscopy imaging of κ-Ga 2 O 3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN, and YSZ substrates. The growth of single crystal orthorhombic κ-Ga 2 O 3 films is confirmed by analyzing the scanning transmission electron microscopy nanodiffraction pattern. The chemical composition, surface stoichiometry, and bandgap energies of κ-Ga 2 O 3 thin films grown on different substrates are studied by high-resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between κ-Ga 2 O 3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with an exception of κ-Ga 2 O 3 /GaN interface, which shows type-I (straddling) band alignment. 
    more » « less
  4. Diffraction analysis in four-dimensional scanning transmission electron microscopy now enables the mapping of local structures including symmetry, strain, and polarization of materials. However, measuring the distribution of these configurations at the unit cell level remains a challenge because most analysis methods require the diffraction disks to be separated, limiting the electron probe sizes to be larger than a unit cell. Here, we show improved spatial resolution in mapping the polarization displacement and phases of BaTiO3sampled at a rate equivalent to the size of the projected unit cells using 4D-STEM. This improvement in spatial resolution is accomplished by masking out the overlapping regions in partially overlapped convergent beam electron diffraction patterns. By reducing the probe size to the order of single projected unit cells in size, the measurement shows local fluctuation within the nanosized rhombohedral domains in tetragonal phased BaTiO3, indicating the origin of phase transition and evolution across different length scales. 
    more » « less
  5. A new compound, Ba 3 Ga 2 O 5 Cl 2 , isostructural with Ba 3 Fe 2 O 5 Cl 2 , was synthesized by solid-state reaction in air. Through single-crystal and powder X-ray diffraction analysis, the crystal structure was determined to be cubic with chiral space group I 2 1 3 and unit-cell parameter a  = 9.928 (1) Å. The Ga 3+ ions in Ba 3 Ga 2 O 5 Cl 2 are coordinated by O atoms and form GaO 4 tetrahedra. Ten neighboring GaO 4 tetrahedra are further bridged through corner sharing and rotation along the body diagonal, producing the chiral structure. Magnetization measurements indicate temperature-independent diamagnetic behavior, which is qualitatively consistent with core diamagnetism from all the constituent elements. 
    more » « less