An official website of the United States government
Abstract Photodetectors that can sense not only light intensity but also light's polarization state add valuable information that is beneficial in a wide array of applications. Polymer semiconductors are an attractive material system to achieve intrinsic polarization sensitivity due to their anisotropic optoelectronic properties. In this report, the thermomechanical properties of the polymer semiconductors PBnDT‐FTAZ and P(NDI2OD‐T2) are leveraged to realize bulk heterojunction (BHJ) films with record in‐plane alignment. Two polymer blends with distinct weight average molar masses (Mw) are considered and either a strain‐ or rub‐alignment process is applied to align the polymer blend films. Optimized processing yields films with dichroic ratios (DR) of over 11 for the highMwsystem and nearly 17 for the lowMwsystem. Incorporating the aligned films into photodetectors results in a polarized photocurrent ratio of 15.25 with corresponding anisotropy ratio of 0.88 at a wavelength of 530 nm, representing the highest reported photocurrent ratio for photodiodes that can operate in a self‐powered regime. The demonstrated performance showcases the ability of polymer semiconductors to achieve BHJ films with exceptional in‐plane polymer alignment, enabling high performance polarization sensitive photodetectors for incorporation into novel device architectures.
more »
« less
Panchromatic All‐Polymer Photodetector with Tunable Polarization Sensitivity
Abstract In this report, a high‐performance all‐polymer organic photodetector that is sensitive to linearly polarized light throughout the visible spectrum is demonstrated. The active layer is a bulk heterojunction composed of an electron donor polymer PBnDT‐FTAZ and acceptor polymer P(NDI2OD‐T2) that have complementary spectral absorption resulting in efficient detection from 350 to 800 nm. The blend film exhibits good ductility with the ability to accommodate large strains of over 60% without fracture. This allows the film to undergo large uniaxial strain resulting in in‐plane alignment of both polymers making the film optically anisotropic and intrinsically polarization sensitive. The films are characterized by UV–vis spectroscopy and grazing incidence wide‐angle X‐ray scattering showing that both polymers have similar in‐plane backbone alignment and maintain packing order after being strained. The films are integrated into devices and characterized under linear polarized light. The strain‐oriented detectors have maximum photocurrent anisotropies of 1.4 under transverse polarized light while maintaining peak responsivities of 0.21 A W−1and a 3 dB cutoff frequency of ≈1 kHz. The demonstrated performance is comparable to the current state of the art all‐polymer photodetectors with the added capability of polarization sensitivity enabling new application opportunities.
more »
« less
- Award ID(s):
- 1639429
- PAR ID:
- 10462682
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Optical Materials
- Volume:
- 7
- Issue:
- 4
- ISSN:
- 2195-1071
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract Carbon nanotubes (CNTs) possess extremely anisotropic electronic, thermal, and optical properties owing to their 1D character. While their linear optical properties have been extensively studied, nonlinear optical processes, such as harmonic generation for frequency conversion, remain largely unexplored in CNTs, particularly in macroscopic CNT assemblies. In this work, macroscopic films of aligned and type‐separated (semiconducting and metallic) CNTs are synthesized and polarization‐dependent third‐harmonic generation (THG) from the films with fundamental wavelengths ranging from 1.5 to 2.5 µm is studied. Both films exhibited strongly wavelength‐dependent, intense THG signals, enhanced through exciton resonances, and third‐order nonlinear optical susceptibilities of 2.50 × 10−19 m2 V−2(semiconducting CNTs) and 1.23 × 10−19 m2 V−2(metallic CNTs), respectively are found, for 1.8 µm excitation. Further, through systematic polarization‐dependent THG measurements, the values of all elements of the susceptibility tensor are determined, verifying the macroscopically 1D nature of the films. Finally, polarized THG imaging is performed to demonstrate the nonlinear anisotropy in the large‐size CNT film with good alignment. These findings promise applications of aligned CNT films in mid‐infrared frequency conversion, nonlinear optical switching, polarized pulsed lasers, polarized long‐wave detection, and high‐performance anisotropic nonlinear photonic devices.more » « less
-
Spin casting has become an attractive method to fabricate polymer thin films found in organic electronic devices such as field-effect transistors, and light emitting diodes. Many studies have shown that altering spin casting parameters can improve device performance, which has been directly correlated to the degree of polymer alignment, crystallinity, and morphology of the thin film. To provide a thorough understanding of the balance of thermodynamic and kinetic factors that influence the stratification of polymer blend thin films, we monitor stratified polymer blend thin films developed from poly(3-hexylthiophene-2,5-diyl) and poly(methyl methacrylate) blends at controlled loading ratios, relative molecular weights, and casting speed. The structures of these thin films were characterized via neutron reflectivity, and the results show that at the fastest casting speed, polymer–polymer interactions and surface energy of the polymers in the blend dictate the final film structure, and at the slowest casting speed, there is less control over the film layering due to the polymer–polymer interactions, surface energy, and entropy simultaneously driving stratification. As well, the relative solubility limits of the polymers in the pre-deposition solution play a role in the stratification process at the slowest casting speed. These results broaden the current understanding of the relationship between spin casting conditions and vertical phase separation in polymer blend thin films and provide a foundation for improved rational design of polymer thin film fabrication processes to attain targeted stratification, and thus performance.more » « less
-
Abstract For wearable and implantable electronics applications, developing intrinsically stretchable polymer semiconductor is advantageous, especially in the manufacturing of large‐area and high‐density devices. A major challenge is to simultaneously achieve good electrical and mechanical properties for these semiconductor devices. While crystalline domains are generally needed to achieve high mobility, amorphous domains are necessary to impart stretchability. Recent progresses in the design of high‐performance donor–acceptor polymers that exhibit low degrees of energetic disorder, while having a high fraction of amorphous domains, appear promising for polymer semiconductors. Here, a low crystalline, i.e., near‐amorphous, indacenodithiophene‐co‐benzothiadiazole (IDTBT) polymer and a semicrystalline thieno[3,2‐b]thiophene‐diketopyrrolopyrrole (DPPTT) are compared, for mechanical properties and electrical performance under strain. It is observed that IDTBT is able to achieve both a high modulus and high fracture strain, and to preserve electrical functionality under high strain. Next, fully stretchable transistors are fabricated using the IDTBT polymer and observed mobility ≈0.6 cm2V−1s−1at 100% strain along stretching direction. In addition, the morphological evolution of the stretched IDTBT films is investigated by polarized UV–vis and grazing‐incidence X‐ray diffraction to elucidate the molecular origins of high ductility. In summary, the near‐amorphous IDTBT polymer signifies a promising direction regarding molecular design principles toward intrinsically stretchable high‐performance polymer semiconductor.more » « less
-
Abstract The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO 3 thin films. Theoretical calculations predict the key role of the BaTiO 3 /PrScO 3 $${({{{{{\boldsymbol{110}}}}}})}_{{{{{{\bf{O}}}}}}}$$ ( 110 ) O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.more » « less
