A thin layer of Al 2 O 3 was employed as an interfacial layer between surface conductive hydrogen-terminated (H-terminated) diamond and MoO 3 to increase the distance between the hole accumulation layer in diamond and negatively charged states in the acceptor layer and, thus, reduce the Coulomb scattering and increase the hole mobility. The valence band offsets are found to be 2.7 and 3.1 eV for Al 2 O 3 /H-terminated diamond and MoO 3 /H-terminated diamond, respectively. Compared to the MoO 3 /H-terminated diamond structure, a higher hole mobility was achieved with Al 2 O 3 inserted as an interface layer. This work provides a strategy to achieve increased hole mobility of surface conductive diamond by using optimal interlayer along with high high electron affinity surface acceptor materials.
more »
« less
Effect of MoO 3 buffer layer on the electronic structure of Al–BP interface
Abstract The interfacial modification effect of the molybdenum trioxide (MoO 3 ) buffer layer inserted between Al and black phosphorus (BP) was investigated with photoemission spectroscopy. The results show that MoO 3 buffer layer can effectively prevent the destruction of the outermost BP lattice by Al thermal deposition and change the interface electronic structure between Al and BP. At the MoO 3 /BP interface, there is an interface dipole pointing from MoO 3 to BP. During the metal deposition process, an interfacial chemical reaction between Al and MoO 3 was found. These observations would provide insight for fabricating high-performance BP-based devices.
more »
« less
- Award ID(s):
- 1903962
- PAR ID:
- 10466091
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 55
- Issue:
- 36
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- 364005
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
The modification by molybdenum trioxide (MoO3) buffer layer on the electronic structure between Co and black phosphorus (BP) was investigated with ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). It was found that the MoO3 buffer layer could effectively prevent the destruction of the outermost BP lattice during the Co deposition, with the symmetry of the lattice remaining maintained. There is a noticeable interfacial charge transfer in addition to the chemical reaction between Co and MoO3. The growth pattern of Co deposited onto the MoO3/BP film is the island growth mode. The observations reveal the significance of a MoO3 buffer layer on the electronic structure between Co and black phosphorus and provide help for the design of high-performance Co/BP-based spintronic devices.more » « less
-
Abstract Hf 0.5 Zr 0.5 O 2 (HZO) thin films are promising candidates for non-volatile memory and other related applications due to their demonstrated ferroelectricity at the nanoscale and compatibility with Si processing. However, one reason that HZO has not been fully scaled into industrial applications is due to its deleterious wake-up and fatigue behavior which leads to an inconsistent remanent polarization during cycling. In this study, we explore an interfacial engineering strategy in which we insert 1 nm Al 2 O 3 interlayers at either the top or bottom HZO/TiN interface of sequentially deposited metal-ferroelectric-metal capacitors. By inserting an interfacial layer while limiting exposure to the ambient environment, we successfully introduce a protective passivating layer of Al 2 O 3 that provides excess oxygen to mitigate vacancy formation at the interface. We report that TiN/HZO/TiN capacitors with a 1 nm Al 2 O 3 at the top interface demonstrate a higher remanent polarization (2P r ∼ 42 μ C cm −2 ) and endurance limit beyond 10 8 cycles at a cycling field amplitude of 3.5 MV cm −1 . We use time-of-flight secondary ion mass spectrometry, energy dispersive spectroscopy, and grazing incidence x-ray diffraction to elucidate the origin of enhanced endurance and leakage properties in capacitors with an inserted 1 nm Al 2 O 3 layer. We demonstrate that the use of Al 2 O 3 as a passivating dielectric, coupled with sequential ALD fabrication, is an effective means of interfacial engineering and enhances the performance of ferroelectric HZO devices.more » « less
-
Abstract This work evaluates the passivation efficacy of thermal atomic layer deposited (ALD) Al 2 O 3 dielectric layer on self-catalyzed GaAs 1- x Sb x nanowires (NWs) grown using molecular beam epitaxy. A detailed assessment of surface chemical composition and optical properties of Al 2 O 3 passivated NWs with and without prior sulfur treatment were studied and compared to as-grown samples using x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and low-temperature photoluminescence (PL) spectroscopy. The XPS measurements reveal that prior sulfur treatment followed by Al 2 O 3 ALD deposition abates III–V native oxides from the NW surface. However, the degradation in 4K-PL intensity by an order of magnitude observed for NWs with Al 2 O 3 shell layer compared to the as-grown NWs, irrespective of prior sulfur treatment, suggests the formation of defect states at the NW/dielectric interface contributing to non-radiative recombination centers. This is corroborated by the Raman spectral broadening of LO and TO Raman modes, increased background scattering, and redshift observed for Al 2 O 3 deposited NWs relative to the as-grown. Thus, our work seems to indicate the unsuitability of ALD deposited Al 2 O 3 as a passivation layer for GaAsSb NWs.more » « less
-
A number of technological applications and scientific experiments require processes for preparing metal multilayers with electronically and thermally conductive interfaces. We investigate how in situ vs ex situ synthesis processes affect the thermal conductance of metal/metal interfaces. We use time-domain thermoreflectance experiments to study thermal transport in Au/Fe, Al/Cu, and Cu/Pt bilayer samples. We quantify the effect of exposing the bottom metal layer to an ambient environment prior to deposition of the top metal layer. We observe that for Au/Fe, exposure of the Fe layer to air before depositing the top Au layer significantly impedes interfacial electronic currents. Exposing Cu to air prior to depositing an Al layer effectively eliminates interfacial electronic heat currents between the two metal layers. Exposure to air appears to have no effect on interfacial transport in the Cu/Pt system. Finally, we show that a short RF sputter etch of the bottom layer surface is sufficient to ensure a thermally and electronically conductive metal/metal interface in all materials we study. We analyze our results with a two-temperature model and bound the electronic interface conductance for the nine samples we study. Our findings have applications for thin-film synthesis and advance fundamental understanding of electronic thermal conductance at different types of interfaces between metals.more » « less