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Abstract The interfacial modification effect of the molybdenum trioxide (MoO 3 ) buffer layer inserted between Al and black phosphorus (BP) was investigated with photoemission spectroscopy. The results show that MoO 3 buffer layer can effectively prevent the destruction of the outermost BP lattice by Al thermal deposition and change the interface electronic structure between Al and BP. At the MoO 3 /BP interface, there is an interface dipole pointing from MoO 3 to BP. During the metal deposition process, an interfacial chemical reaction between Al and MoO 3 was found. These observations would provide insight for fabricating high-performance BP-based devices.
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MoO3 Interlayer Modification on the Electronic Structure of Co/BP Interface
The modification by molybdenum trioxide (MoO3) buffer layer on the electronic structure between Co and black phosphorus (BP) was investigated with ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). It was found that the MoO3 buffer layer could effectively prevent the destruction of the outermost BP lattice during the Co deposition, with the symmetry of the lattice remaining maintained. There is a noticeable interfacial charge transfer in addition to the chemical reaction between Co and MoO3. The growth pattern of Co deposited onto the MoO3/BP film is the island growth mode. The observations reveal the significance of a MoO3 buffer layer on the electronic structure between Co and black phosphorus and provide help for the design of high-performance Co/BP-based spintronic devices.
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- Award ID(s):
- 1903962
- PAR ID:
- 10466094
- Date Published:
- Journal Name:
- Symmetry
- Volume:
- 14
- Issue:
- 11
- ISSN:
- 2073-8994
- Page Range / eLocation ID:
- 2448
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/sym14112448
