This content will become publicly available on June 1, 2024
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
- Award ID(s):
- 2008412
- NSF-PAR ID:
- 10467529
- Publisher / Repository:
- IEEE
- Date Published:
- Journal Name:
- IEEE Transactions on Electron Devices
- Volume:
- 70
- Issue:
- 6
- ISSN:
- 0018-9383
- Page Range / eLocation ID:
- 2962 to 2969
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation