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Title: Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
Award ID(s):
2008412
NSF-PAR ID:
10467529
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
IEEE
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
Volume:
70
Issue:
6
ISSN:
0018-9383
Page Range / eLocation ID:
2962 to 2969
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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