Abstract Carbon-doped silicon oxide (CDO) thin films as low dielectric constant materials were deposited on both n-type silicon (Si) (100) and indium tin oxide coated polyethylene naphthalate (ITO/PEN) substrates, using the plasma-enhanced chemical vapor deposition of tetrakis(trimethylsilyoxy)silane (TTMSS) precursor. Chemical structures of the CDO films were analyzed by using FTIR (Fourier transformation infrared) spectroscopy and XPS (X-ray photoelectron spectroscopy). The chemical bonds related with hydrocarbon and Si–O were the main characteristics of the CDO films. The prominent peaks from the FTIR spectra included Si–O–Si stretching, Si–CH3 bending, Si–(CH3)x stretching, and CHx stretching modes. XPS spectra composed of the O1s, C1s, and Si2p electron orbitals were used to quantitatively analyze the elemental composition of the CDO films. The growth mechanisms of CDO films were dependent on the substrate type. For the ITO/PEN substrate, the lack of Si atoms on the ITO surface made difficulty in forming initial Si–O bonds, resulting in insufficient Si–O–Si structure. In comparison, the CDO films could grow easily on Si substrates due to pre-existing Si–O bonds on the surface. The chemical structures of the CDO films are expected to affect electrical and mechanical performances.
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Compositional Analysis of SiOC(H) Powders: A Comparison of X-ray Photoelectron Spectroscopy (XPS) and Combustion Analysis
Accurate chemical analysis of small samples of fine powders in the Si–O–C–H system is challenging. We present a comparison of analysis by X-ray photoelectron spectroscopy (XPS) and combustion analysis, validating XPS as an accurate and simple methodology for Si, C, and O analysis to give bulk and not just surface compositions. The XPS analyses are supported by showing consistency in thermochemical calculations of heats of formation based on high temperature oxide melt solution calorimetry. However, because XPS is not suitable for quantitation of hydrogen, it must be combined with other techniques for samples with substantial H content.
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- Award ID(s):
- 1743701
- PAR ID:
- 10469640
- Publisher / Repository:
- MDPI
- Date Published:
- Journal Name:
- Ceramics
- Volume:
- 6
- Issue:
- 1
- ISSN:
- 2571-6131
- Page Range / eLocation ID:
- 74 to 85
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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