Xiao, Yi, Deng, Shan, Zhao, Zijian, Faris, Zubair, Xu, Yixin, Huang, Tzu-Jung, Narayanan, Vijaykrishnan, and Ni, Kai. Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement. Retrieved from https://par.nsf.gov/biblio/10474115. IEEE Electron Device Letters 44.9 Web. doi:10.1109/LED.2023.3290940.

Xiao, Yi, Deng, Shan, Zhao, Zijian, Faris, Zubair, Xu, Yixin, Huang, Tzu-Jung, Narayanan, Vijaykrishnan, & Ni, Kai. Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement. IEEE Electron Device Letters, 44 (9). Retrieved from https://par.nsf.gov/biblio/10474115. https://doi.org/10.1109/LED.2023.3290940

Xiao, Yi, Deng, Shan, Zhao, Zijian, Faris, Zubair, Xu, Yixin, Huang, Tzu-Jung, Narayanan, Vijaykrishnan, and Ni, Kai. "Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement". IEEE Electron Device Letters 44 (9). Country unknown/Code not available: IEEE. https://doi.org/10.1109/LED.2023.3290940. https://par.nsf.gov/biblio/10474115.

@article{osti_10474115,
place = {Country unknown/Code not available}, title = {Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement}, url = {https://par.nsf.gov/biblio/10474115}, DOI = {10.1109/LED.2023.3290940}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {44}, number = {9}, publisher = {IEEE}, author = {Xiao, Yi and Deng, Shan and Zhao, Zijian and Faris, Zubair and Xu, Yixin and Huang, Tzu-Jung and Narayanan, Vijaykrishnan and Ni, Kai}, }