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   https://doi.org/10.1021/acs.inorgchem.2c00865  

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2. Tl ₂ Ir ₂ O ₇ : A Pauli Paramagnetic Metal, Proximal to a Metal Insulator Transition

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3. Unexpectedly large remanent polarization of Hf _0.5 Zr _0.5 O ₂ metal–ferroelectric–metal capacitor fabricated without breaking vacuum

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   Lee, Younghwan; Alex Hsain, H.; Fields, Shelby S.; Jaszewski, Samantha T.; Horgan, Madison D.; Edgington, Patrick G.; Ihlefeld, Jon F.; Parsons, Gregory N.; Jones, Jacob L. (January 2021, Applied Physics Letters)

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4. Exfoliable Transition Metal Chalcogenide Semiconductor NbSe ₂ I ₂

   https://doi.org/10.1021/acs.inorgchem.3c03493  

   Qu, Kejian; Zhang, Yue; Peng, Cheng; Riedel, Zachary W.; Won, Juyeon; Zhang, Rong; Woods, Toby J.; Devereaux, Tom; van der Zande, Arend M.; Shoemaker, Daniel P. (January 2024, Inorganic Chemistry)

   As the field of exfoliated van der Waals electronics grows to include complex heterostructures, the variety of available in-plane symmetries and geometries becomes increasingly valuable. In this work, we present an efficient chemical vapor transport synthesis of NbSe2I2 with the triclinic space group P1̅. This material contains Nb–Nb dimers and an in-plane crystallographic angle γ = 61.3°. We show that NbSe2I2 can be exfoliated down to few-layer and monolayer structures and use Raman spectroscopy to test the preservation of the crystal structure of exfoliated thin films. The crystal structure was verified by single-crystal and powder X-ray diffraction methods. Density functional theory calculations show triclinic NbSe2I2 to be a semiconductor with a band gap of around 1 eV, with similar band structure features for bulk and monolayer crystals. The physical properties of NbSe2I2 have been characterized by transport, thermal, optical, and magnetic measurements, demonstrating triclinic NbSe2I2 to be a diamagnetic semiconductor that does not exhibit any phase transformation below room temperature. 

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5. Isostructural metal-insulator transition in VO ₂

   https://doi.org/10.1126/science.aam9189  

   Lee, D.; Chung, B.; Shi, Y.; Kim, G. -Y.; Campbell, N.; Xue, F.; Song, K.; Choi, S. -Y.; Podkaminer, J. P.; Kim, T. H.; et al (November 2018, Science)

   The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities. 

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