The morphology, chemical composition, and electronic uniformity of thin‐film solution‐processed optoelectronics are believed to greatly affect device performance. Although scanning probe microscopies can address variations on the micrometer scale, the field of view is still limited to well under the typical device area, as well as the size of extrinsic defects introduced during fabrication. Herein, a micrometer‐resolution 2D characterization method with millimeter‐scale field of view is demonstrated, which simultaneously collects photoluminescence spectra, photocurrent transients, and photovoltage transients. This high‐resolution morphology mapping is used to quantify the distribution and strength of the local optoelectronic property variations in colloidal quantum dot solar cells due to film defects, physical damage, and contaminants across nearly the entire test device area, and the extent to which these variations account for overall performance losses. It is found that macroscopic defects have effects that are confined to their localized areas, rarely prove fatal for device performance, and are largely not responsible for device shunting. Moreover, quantitative analysis based on statistical partitioning methods of such data is used to show how defect identification can be automated while identifying variations in underlying properties such as mobilities and recombination strengths and the mechanisms by which they govern device behavior.
2D materials‐based device performance is significantly affected by film non‐uniformity, especially for large area devices. Here, it investigates the dependence of large area 2D MoS2phototransistor performance on film morphology through correlative mapping. Monolayer MoS2films are quazi‐epitaxially synthesized on C‐plane sapphire (Al2O3) substrates by chemical vapor deposition, and the growth time and molybdenum trioxide MoO3precursor volume are varied to obtain variations in film morphology. Raman, photoluminescence, transmittance, and photocurrent maps are generated and compared with each other to obtain a holistic understanding of large area 2D optoelectronic device performance. For example, it shows that the photoluminescence peak shift and intensity can be used to investigate strain and other defects across multiple film morphologies, giving insight into their effects on the photogenerated current in these devices. It also combines photocurrent and absorption maps to generate large area high‐resolution external quantum efficiency and internal quantum efficiency maps for the devices. This study demonstrates the benefit of correlative mapping in the understanding and advancement of large area 2D material‐based electronic and optoelectronic devices.
more » « less- NSF-PAR ID:
- 10478647
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials Interfaces
- Volume:
- 10
- Issue:
- 34
- ISSN:
- 2196-7350
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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