Dumre, B.B., Nelson, R.J., Irving, R.E., Ellingson, R.J., and Khare, S.V. Trends in opto-electronic properties of MgxZn1-xSnN2 using first principles methods. Retrieved from https://par.nsf.gov/biblio/10479638. Materials Chemistry and Physics 294.C Web. doi:10.1016/j.matchemphys.2022.126995.

Dumre, B.B., Nelson, R.J., Irving, R.E., Ellingson, R.J., & Khare, S.V. Trends in opto-electronic properties of MgxZn1-xSnN2 using first principles methods. Materials Chemistry and Physics, 294 (C). Retrieved from https://par.nsf.gov/biblio/10479638. https://doi.org/10.1016/j.matchemphys.2022.126995

Dumre, B.B., Nelson, R.J., Irving, R.E., Ellingson, R.J., and Khare, S.V. "Trends in opto-electronic properties of MgxZn1-xSnN2 using first principles methods". Materials Chemistry and Physics 294 (C). Country unknown/Code not available: Elsevier. https://doi.org/10.1016/j.matchemphys.2022.126995. https://par.nsf.gov/biblio/10479638.

@article{osti_10479638,
place = {Country unknown/Code not available}, title = {Trends in opto-electronic properties of MgxZn1-xSnN2 using first principles methods}, url = {https://par.nsf.gov/biblio/10479638}, DOI = {10.1016/j.matchemphys.2022.126995}, abstractNote = {}, journal = {Materials Chemistry and Physics}, volume = {294}, number = {C}, publisher = {Elsevier}, author = {Dumre, B.B. and Nelson, R.J. and Irving, R.E. and Ellingson, R.J. and Khare, S.V.}, }