The scaling of many photonic quantum information processing systems is ultimately limited by the flux of quantum light throughout an integrated photonic circuit. Source brightness and waveguide loss set basic limits on the on-chip photon flux. While substantial progress has been made, separately, towards ultra-low loss chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report the integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic circuit. We demonstrate triggered and pure single-photon emission into a Si3N4photonic circuit with ≈ 1 dB/m propagation loss at a wavelength of ≈ 930 nm. We also observe resonance fluorescence in the strong drive regime, showing promise towards coherent control of quantum emitters. These results are a step forward towards scaled chip-integrated photonic quantum information systems in which storing, time-demultiplexing or buffering of deterministically generated single-photons is critical.
We demonstrate the integration of superconducting single-photon detectors onto arbitrary photonic substrates via transfer printing. Using this method, we show single-photon detection in a lithium niobate on insulator photonic circuit.
more » « less- Award ID(s):
- 1747426
- PAR ID:
- 10479830
- Publisher / Repository:
- Optica Publishing Group
- Date Published:
- ISBN:
- 978-1-957171-25-8
- Page Range / eLocation ID:
- FM2E.5
- Format(s):
- Medium: X
- Location:
- San Jose, CA
- Sponsoring Org:
- National Science Foundation
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Abstract -
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Abstract Silicon is the ideal material for building electronic and photonic circuits at scale. Integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources and strong photon-photon interactions in silicon poses a challenge to scalability. In this work, we demonstrate an indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source single photons suitable for photonic quantum networks and processors.
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Newly discovered silicon nitride quantum emitters hold great promise for industrial-scale quantum photonic applications. We assess the performance of intrinsic room-temperature SiN single-photon emitters for quantum key distribution, showcasing their exceptional brightness and single-photon purity.
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We present a mechanism that harnesses extremely weak Kerr-type nonlinearities in a single driven cavity to deterministically generate single-photon Fock states and more general photon-blockaded states. Our method is effective even for nonlinearities that are orders-of-magnitude smaller than photonic loss. It is also completely distinct from so-called unconventional photon blockade mechanisms, as the generated states are non-Gaussian, exhibit a sharp cutoff in their photon number distribution, and can be arbitrarily close to a single-photon Fock state. Our ideas require only standard linear and parametric drives and are hence compatible with a variety of different photonic platforms.more » « less
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1364/CLEO_FS.2023.FM2E.5
