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1. Electron acceleration using twisted laser wavefronts

   https://doi.org/10.1088/1361-6587/ac318d  

   Shi, Yin ; R Blackman, David ; Arefiev, Alexey ( November 2021 , Plasma Physics and Controlled Fusion)

   Abstract Using plasma mirror injection we demonstrate, both analytically and numerically, that a circularly polarized helical laser pulse can accelerate highly collimated dense bunches of electrons to several hundred MeV using currently available laser systems. The circular-polarized helical (Laguerre–Gaussian) beam has a unique field structure where the transverse fields have helix-like wave-fronts which tend to zero on-axis where, at focus, there are large on-axis longitudinal magnetic and electric fields. The acceleration of electrons by this type of laser pulse is analyzed as a function of radial mode number and it is shown that the radial mode number has a profound effect on electron acceleration close to the laser axis. Using three-dimensional particle-in-cell simulations a circular-polarized helical laser beam with power of 0.6 PW is shown to produce several dense attosecond bunches. The bunch nearest the peak of the laser envelope has an energy of 0.47 GeV with spread as narrow as 10%, a charge of 26 pC with duration of ∼ 400 as, and a very low divergence of 20 mrad. The confinement by longitudinal magnetic fields in the near-axis region allows the longitudinal electric fields to accelerate the electrons over a long period after the initial reflection. Both the longitudinal E and B fields are shown to be essential for electron acceleration in this scheme. This opens up new paths toward attosecond electron beams, or attosecond radiation, at many laser facilities around the world. 

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2. An analytic evaluation of gravitational particle production of fermions via Stokes phenomenon

   Hashiba, Soichiro ; Ling, Siyang ; Long, Andrew J. ( September 2022 , Journal of High Energy Physics)

   A bstract The phenomenon of gravitational particle production can take place for quantum fields in curved spacetime. The abundance and energy spectrum of gravitationally produced particles is typically calculated by solving the field’s mode equations on a time-dependent background metric. For purposes of studying dark matter production in an inflationary cosmology, these mode equations are often solved numerically, which is computationally intensive, especially for the rapidly-oscillating high-momentum modes. However, these same modes are amenable to analytic evaluation via the Exact Wentzel-Kramers-Brillouin (EWKB) method, where gravitational particle production is a manifestation of the Stokes phenomenon. These analytic techniques have been used in the past to study gravitational particle production for spin-0 bosons. We extend the earlier work to study gravitational production of spin-1/2 and spin-3/2 fermions. We derive an analytic expression for the connection matrix (valid to all orders in an adiabatic parameter ħ ) that relates Bogoliubov coefficients across a Stokes line connecting a merged pair of simple turning points. By comparing the analytic approximation with a direct numerical integration of the mode equations, we demonstrate an excellent agreement and highlight the utility of the Stokes phenomenon formalism applied to fermions. We discuss the implications for an analytic understanding of catastrophic particle production due to vanishing sound speed, which can occur for a spin-3/2 Rarita-Schwinger field. 

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3. Dark QED from inflation

   https://doi.org/10.1007/JHEP11(2021)106  

   Arvanitaki, Asimina ; Dimopoulos, Savas ; Galanis, Marios ; Racco, Davide ; Simon, Olivier ; Thompson, Jedidiah O. ( November 2021 , Journal of High Energy Physics)

   One contribution to any dark sector’s abundance comes from its gravitational production during inflation. If the dark sector is weakly coupled to the inflaton and the Standard Model, this can be its only production mechanism. For non-interacting dark sectors, such as a free massive fermion or a free massive vector field, this mechanism has been studied extensively. In this paper we show, via the example of dark massive QED, that the presence of interactions can result in a vastly different mass for the dark matter (DM) particle, which may well coincide with the range probed by upcoming experiments.

   In the context of dark QED we study the evolution of the energy density in the dark sector after inflation. Inflation produces a cold vector condensate consisting of an enormous number of bosons, which via interesting processes — Schwinger pair production, strong field electromagnetic cascades, and plasma dynamics — transfers its energy to a small number of “dark electrons” and triggers thermalization of the dark sector. The resulting dark electron DM mass range is from 50 MeV to 30 TeV, far different from both the 10⁻⁵eV mass of the massive photon dark matter in the absence of dark electrons, and from the 10⁹GeV dark electron mass in the absence of dark photons. This can significantly impact the search strategies for dark QED and, more generally, theories with a self-interacting DM sector. In the presence of kinetic mixing, a dark electron in this mass range can be searched for with upcoming direct detection experiments, such as SENSEI-100g and OSCURA.

    

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4. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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5. Electron Heating in 2D Particle-in-cell Simulations of Quasi-perpendicular Low-beta Shocks

   https://doi.org/10.3847/1538-4357/ad1f69  

   Tran, Aaron ; Sironi, Lorenzo ( April 2024 , The Astrophysical Journal)

   We measure the thermal electron energization in 1D and 2D particle-in-cell simulations of quasi-perpendicular, low-beta (β_p= 0.25) collisionless ion–electron shocks with mass ratiom_i/m_e= 200, fast Mach number${\mathcal{M}}_{\mathrm{ms}}=1$–4, and upstream magnetic field angleθ_Bn= 55°–85° from the shock normal$\hat{\mathit{n}}$. It is known that shock electron heating is described by an ambipolar,B-parallel electric potential jump, Δϕ_∥, that scales roughly linearly with the electron temperature jump. Our simulations have$\mathrm{\Delta }{\varphi }_{\parallel }/(0.5m_{\mathrm{i}}{u_{\mathrm{sh}}}^2)\sim 0.1$–0.2 in units of the pre-shock ions’ bulk kinetic energy, in agreement with prior measurements and simulations. Different ways to measureϕ_∥, including the use of de Hoffmann–Teller frame fields, agree to tens-of-percent accuracy. Neglecting off-diagonal electron pressure tensor terms can lead to a systematic underestimate ofϕ_∥in our low-β_pshocks. We further focus on twoθ_Bn= 65° shocks: a${\mathcal{M}}_{\mathrm{s}}=4$(${\mathcal{M}}_{\mathrm{A}}=1.8$) case with a long, 30d_iprecursor of whistler waves along$\hat{\mathit{n}}$, and a${\mathcal{M}}_{\mathrm{s}}=7$(${\mathcal{M}}_{\mathrm{A}}=3.2$) case with a shorter, 5d_iprecursor of whistlers oblique to both$\hat{\mathit{n}}$andB;d_iis the ion skin depth. Within the precursors,ϕ_∥has a secular rise toward the shock along multiple whistler wavelengths and also has localized spikes within magnetic troughs. In a 1D simulation of the${\mathcal{M}}_{\mathrm{s}}=4$,θ_Bn= 65° case,ϕ_∥shows a weak dependence on the electron plasma-to-cyclotron frequency ratioω_pe/Ω_ce, andϕ_∥decreases by a factor of 2 asm_i/m_eis raised to the true proton–electron value of 1836.

    

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