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Abstract Heat dissipation is a major limitation of high‐performance electronics. This is especially important in emerging nanoelectronic devices consisting of ultra‐thin layers, heterostructures, and interfaces, where enhancement in thermal transport is highly desired. Here, ultra‐high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single‐layer transition metal dichalcogenides MX2(MoS2, WSe2, WS2) sandwiched between two hexagonal boron nitride (hBN) layers is reported. Through Raman spectroscopic measurements of suspended and substrate‐supported hBN/MX2/hBN heterostructures with varying laser power and temperature, the out‐of‐plane interfacial thermal conductance in the vertical stack is calibrated. The measured interfacial thermal conductance between MX2and hBN reaches 74 ± 25 MW m−2K−1, which is at least ten times higher than the interfacial thermal conductance of MX2in non‐encapsulation structures. Molecular dynamics (MD) calculations verify and explain the experimental results, suggesting a full encapsulation by hBN layers is accounting for the high interfacial conductance. This ultra‐high interfacial thermal conductance is attributed to the double heat transfer pathways and the clean and tight vdW interface between two crystalline 2D materials. The findings in this study reveal new thermal transport mechanisms in hBN/MX2/hBN structures and shed light on building novel hBN‐encapsulated nanoelectronic devices with enhanced thermal management.
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Electrically gated molecular thermal switch
Controlling heat flow is a key challenge for applications ranging from thermal management in electronics to energy systems, industrial processing, and thermal therapy. However, progress has generally been limited by slow response times and low tunability in thermal conductance. In this work, we demonstrate an electronically gated solid-state thermal switch using self-assembled molecular junctions to achieve excellent performance at room temperature. In this three-terminal device, heat flow is continuously and reversibly modulated by an electric field through carefully controlled chemical bonding and charge distributions within the molecular interface. The devices have ultrahigh switching speeds above 1 megahertz, have on/off ratios in thermal conductance greater than 1300%, and can be switched more than 1 million times. We anticipate that these advances will generate opportunities in molecular engineering for thermal management systems and thermal circuit design.
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- PAR ID:
- 10482571
- Publisher / Repository:
- AAAS
- Date Published:
- Journal Name:
- Science
- Volume:
- 382
- Issue:
- 6670
- ISSN:
- 0036-8075
- Page Range / eLocation ID:
- 585 to 589
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1126/science.abo4297
