The growth of monoclinic phase‐pure gallium oxide (β‐Ga2O3) layers by metal–organic chemical vapor deposition on c‐plane sapphire and aluminum nitride (AlN) templates using silicon‐oxygen bonding (SiO
Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO3thin films have typically been deposited at relatively high temperatures (650–800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO3at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb0.75Bi0.25O3electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO3, BaPb0.75Bi0.25O3, and SrTiO3(001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO3. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO3, where SrRuO3typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.
more » « less- Award ID(s):
- 2239545
- PAR ID:
- 10485432
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 15
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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null (Ed.)Sm-doped BiFeO 3 (Bi 0.85 Sm 0.15 FeO 3 , or BSFO) thin films were fabricated on (001) SrTiO 3 (STO) substrates by pulsed laser deposition (PLD) over a range of deposition temperatures (600 °C, 640 °C and 670 °C). Detailed analysis of their microstructure via X-ray diffraction (XRD) and transmission electron microscopy (TEM) shows the deposition temperature dependence of ferroelectric (FE) and antiferroelectric (AFE) phase formation in BSFO. The Sm dopants are clearly detected by high-resolution scanning transmission electron microscopy (HR-STEM) and prove effective in controlling the ferroelectric properties of BSFO. The BSFO ( T dep = 670 °C) presents larger remnant polarization (Pr) than the other two BSFO ( T dep = 600 °C, 640 °C) and pure BiFeO 3 (BFO) thin films. This study paves a simple way for enhancing the ferroelectric properties of BSFO via deposition temperature and further promoting BFO practical applications.more » « less
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Abstract The present paper reports the multifunctional properties of lead‐free BiFeO3–La (BFO–La) thin films. The structural, microstructural, and optical properties have been investigated as a function of the lanthanum doping concentration. The structural properties at room temperature showed the formation of the perovskite structure, thus suggesting the high quality of the obtained thin film compositions. Raman spectroscopy analysis revealed a slight variation in both the peak position and absolute intensity for the Raman active modes, as lanthanum content increases in BiFeO3–La. Crystallized thin films with well‐defined grains as well as crack‐free surfaces have been obtained, for all the studied compositions, as inferred from atomic force microscopy images. The optical properties have been measured, and the values for the direct bandgap was significantly lower than those reported for other BFO‐based systems, being the lowest ∼1.87 eV for the Bi0.90La0.10FeO3composition. Results revealed a noteworthy effect of the defect concentrations induced by the lanthanum doping on the long‐range crystallinity and directly affecting the polarizability of the A–O bond as well as the Fe–O and Fe–O–Fe bond lengths in the perovskite structure. The enhanced optical absorption properties registered for the Bi1–
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Abstract The solid‐state synthesis of perovskite BiFeO3has been a topic of interest for decades. Many studies have reported challenges in the synthesis of BiFeO3from starting oxides of Bi2O3and Fe2O3, mainly associated with the development of persistent secondary phases such as Bi25FeO39(sillenite) and Bi2Fe4O9(mullite). These secondary phases are thought to be a consequence of unreacted Fe‐rich and Bi‐rich regions, that is, incomplete interdiffusion. In the present work, in situ high‐temperature X‐ray diffraction is used to demonstrate that Bi2O3first reacts with Fe2O3to form sillenite Bi25FeO39, which then reacts with the remaining Fe2O3to form BiFeO3. Therefore, the synthesis of perovskite BiFeO3is shown to occur via a two‐step reaction sequence with Bi25FeO39as an intermediate compound. Because Bi25FeO39and the γ‐Bi2O3phase are isostructural, it is difficult to discriminate them solely from X‐ray diffraction. Evidence is presented for the existence of the intermediate sillenite Bi25FeO39using quenching experiments, comparisons between Bi2O3behavior by itself and in the presence of Fe2O3, and crystal structure examination. With this new information, a proposed reaction pathway from the starting oxides to the product is presented.
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The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of β-Ga 2 O 3 . Epitaxial β-Ga 2 O 3 layers at high growth rates (above 1 μm/h), at low reagent flows, and at reduced growth temperatures (740 °C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial β-Ga 2 O 3 layers are demonstrated with a [Formula: see text]01 rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown ([Formula: see text]01) β-Ga 2 O 3 substrates, indicative of similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further explored for the fabrication of β-Ga 2 O 3 .more » « less
