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The growth of monoclinic phase‐pure gallium oxide (β‐Ga2O3) layers by metal–organic chemical vapor deposition on c‐plane sapphire and aluminum nitride (AlN) templates using silicon‐oxygen bonding (SiOx) as a phase stabilizer is reported. The β‐Ga2O3layers are grown using triethylgallium, oxygen, and silane for gallium, oxygen, and silicon precursors, respectively, at 700 °C, with and without silane flow in the process. The samples grown on sapphire with SiOxphase stabilization show a notable change from samples without phase stabilization in the roughness and resistivity, from 16.2 to 4.2 nm and from 85.82 to 135.64 Ω cm, respectively. X‐ray diffraction reveals a pure‐monoclinic phase, and Raman spatial mapping exhibits higher tensile strain in the films in the presence of SiOx. The β‐Ga2O3layers grown on an AlN template, using the same processes as for sapphire, show an excellent epitaxial relationship between β‐Ga2O3and AlN and have a significant change in β‐Ga2O3surface morphology.
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Low-temperature grapho-epitaxial La-substituted BiFeO3 on metallic perovskite
Abstract Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO3thin films have typically been deposited at relatively high temperatures (650–800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO3at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb0.75Bi0.25O3electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO3, BaPb0.75Bi0.25O3, and SrTiO3(001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO3. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO3, where SrRuO3typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.
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- Award ID(s):
- 2239545
- PAR ID:
- 10485432
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 15
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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