skip to main content


Title: Quantum octets in high mobility pentagonal two-dimensional PdSe2
Abstract

Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm2/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.

 
more » « less
NSF-PAR ID:
10487775
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
Nature Communications
Volume:
15
Issue:
1
ISSN:
2041-1723
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Being able to electrically manipulate the magnetic properties in recently discovered van der Waals ferromagnets is essential for their integration in future spintronics devices. Here, the magnetization of a semiconducting 2D ferromagnet, i.e., Cr2Ge2Te6, is studied using the anomalous Hall effect in Cr2Ge2Te6/tantalum heterostructures. The thinner the flakes, hysteresis and remanence in the magnetization loop with out‐of‐plane magnetic fields become more prominent. In order to manipulate the magnetization in such thin flakes, a combination of an in‐plane magnetic field and a charge current flowing through Ta—a heavy metal exhibiting giant spin Hall effect—is used. In the presence of in‐plane fields of 20 mT, charge current densities as low as 5 × 105A cm–2are sufficient to switch the out‐of‐plane magnetization of Cr2Ge2Te6. This finding highlights that current densities required for spin‐orbit torque switching of Cr2Ge2Te6are about two orders of magnitude lower than those required for switching nonlayered metallic ferromagnets such as CoFeB. The results presented here show the potential of 2D ferromagnets for low‐power memory and logic applications.

     
    more » « less
  2. Abstract

    Electric-double-layer (EDL) gated transistors use ions in an electrolyte to induce charge in the channel of the transistor by field-effect. Because a sub-nanometer gap capacitor is created at the electrolyte/channel interface, large capacitance densities (∼µF cm−2) corresponding to high sheet carrier densities (1014cm−2) can be induced, exceeding conventional gate dielectrics by about one order of magnitude. Because it is an interfacial technique, EDL gating is especially effective on two-dimensional (2D) crystals, which—at the monolayer limit—are basically interfaces themselves. Both solid polymer electrolytes and ionic liquids are routinely used as ion-conducting gate dielectrics, and they have provided access to regimes of transport in 2D materials that would be inaccessible otherwise. The technique, now widely used, has enabled the 2D crystal community to study superconductivity, spin- and valleytronics, investigate electrical and structural phase transitions, and create abruptp-njunctions to generate tunneling, among others. In addition to using EDL gating as a tool to investigate properties of the 2D crystals, more recent efforts have emerged to engineer the electrolyte to add new functionality and device features, such as synaptic plasticity, bistability and non-volatility. Example of potential applications include neuromorphic computing and non-volatile memory. This review focuses on using ions forelectrostaticcontrol of 2D crystal transistors both to uncover basic properties of 2D crystals, and also to add new device functionalities.

     
    more » « less
  3. Abstract

    Haldane topological materials contain unique antiferromagnetic chains with symmetry-protected energy gaps. Such materials have potential applications in spintronics and future quantum computers. Haldane topological solids typically consist of spin-1 chains embedded in extended three-dimensional (3D) crystal structures. Here, we demonstrate that [Ni(μ−4,4′-bipyridine)(μ-oxalate)]n(NiBO) instead adopts a two-dimensional (2D) metal-organic framework (MOF) structure of Ni2+spin-1 chains weakly linked by 4,4′-bipyridine. NiBO exhibits Haldane topological properties with a gap between the singlet ground state and the triplet excited state. The latter is split by weak axial and rhombic anisotropies. Several experimental probes, including single-crystal X-ray diffraction, variable-temperature powder neutron diffraction (VT-PND), VT inelastic neutron scattering (VT-INS), DC susceptibility and specific heat measurements, high-field electron spin resonance, and unbiased quantum Monte Carlo simulations, provide a detailed, comprehensive characterization of NiBO. Vibrational (also known as phonon) properties of NiBO have been probed by INS and density-functional theory (DFT) calculations, indicating the absence of phonons near magnetic excitations in NiBO, suppressing spin-phonon coupling. The work here demonstrates that NiBO is indeed a rare 2D-MOF Haldane topological material.

     
    more » « less
  4. Abstract

    Van der Waals interactions in 2D materials have enabled the realization of nanoelectronics with high‐density vertical integration. Yet, poor energy transport through such 2D–2D and 2D–3D interfaces can limit a device's performance due to overheating. One long‐standing question in the field is how different encapsulating layers (e.g., contact metals or gate oxides) contribute to the thermal transport at the interface of 2D materials with their 3D substrates. Here, a novel self‐heating/self‐sensing electrical thermometry platform is developed based on atomically thin, metallic Ti3C2MXene sheets, which enables experimental investigation of the thermal transport at a Ti3C2/SiO2interface, with and without an aluminum oxide (AlOx) encapsulating layer. It is found that at room temperature, the thermal boundary conductance (TBC) increases from 10.8 to 19.5 MW m−2K−1upon AlOxencapsulation. Boltzmann transport modeling reveals that the TBC can be understood as a series combination of an external resistance between the MXene and the substrate, due to the coupling of low‐frequency flexural acoustic (ZA) phonons to substrate modes, and an internal resistance between ZA and in‐plane phonon modes. It is revealed that internal resistance is a bottle‐neck to heat removal and that encapsulation speeds up the heat transfer into low‐frequency ZA modes and reduces their depopulation, thus increasing the effective TBC.

     
    more » « less
  5. Abstract

    Strongly correlated spin systems can be driven to quantum critical points via various routes. In particular, gapped quantum antiferromagnets can undergo phase transitions into a magnetically ordered state with applied pressure or magnetic field, acting as tuning parameters. These transitions are characterized byz = 1 orz = 2 dynamical critical exponents, determined by the linear and quadratic low-energy dispersion of spin excitations, respectively. Employing high-frequency susceptibility and ultrasound techniques, we demonstrate that the tetragonal easy-plane quantum antiferromagnet NiCl2 ⋅ 4SC(NH2)2(aka DTN) undergoes a spin-gap closure transition at about 4.2 kbar, resulting in a pressure-induced magnetic ordering. The studies are complemented by high-pressure-electron spin-resonance measurements confirming the proposed scenario. Powder neutron diffraction measurements revealed that no lattice distortion occurs at this pressure and the high spin symmetry is preserved, establishing DTN as a perfect platform to investigatez = 1 quantum critical phenomena. The experimental observations are supported by DMRG calculations, allowing us to quantitatively describe the pressure-driven evolution of critical fields and spin-Hamiltonian parameters in DTN.

     
    more » « less