Luo, Weijun, Puretzky, Alexander, Lawrie, Benjamin, Tan, Qishuo, Gao, Hongze, Swan, Anna K., Liang, Liangbo, and Ling, Xi. Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping. Retrieved from https://par.nsf.gov/biblio/10487792. Nano Letters 23.21 Web. doi:10.1021/acs.nanolett.3c02308.

Luo, Weijun, Puretzky, Alexander, Lawrie, Benjamin, Tan, Qishuo, Gao, Hongze, Swan, Anna K., Liang, Liangbo, & Ling, Xi. Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping. Nano Letters, 23 (21). Retrieved from https://par.nsf.gov/biblio/10487792. https://doi.org/10.1021/acs.nanolett.3c02308

Luo, Weijun, Puretzky, Alexander, Lawrie, Benjamin, Tan, Qishuo, Gao, Hongze, Swan, Anna K., Liang, Liangbo, and Ling, Xi. "Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping". Nano Letters 23 (21). Country unknown/Code not available: Nano Letters. https://doi.org/10.1021/acs.nanolett.3c02308. https://par.nsf.gov/biblio/10487792.

@article{osti_10487792,
place = {Country unknown/Code not available}, title = {Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping}, url = {https://par.nsf.gov/biblio/10487792}, DOI = {10.1021/acs.nanolett.3c02308}, abstractNote = {}, journal = {Nano Letters}, volume = {23}, number = {21}, publisher = {Nano Letters}, author = {Luo, Weijun and Puretzky, Alexander and Lawrie, Benjamin and Tan, Qishuo and Gao, Hongze and Swan, Anna K. and Liang, Liangbo and Ling, Xi}, }