Cao, Jun, Li, Tianshu, Gao, Hongze, Cong, Xin, Lin, Miao-Ling, Russo, Nicholas, Luo, Weijun, Ding, Siyuan, Wang, Zifan, Smith, Kevin E., Tan, Ping-Heng, Ma, Qiong, and Ling, Xi. Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS. Retrieved from https://par.nsf.gov/biblio/10487827. Journal of Electronic Materials 52.11 Web. doi:10.1007/s11664-023-10670-w.

Cao, Jun, Li, Tianshu, Gao, Hongze, Cong, Xin, Lin, Miao-Ling, Russo, Nicholas, Luo, Weijun, Ding, Siyuan, Wang, Zifan, Smith, Kevin E., Tan, Ping-Heng, Ma, Qiong, & Ling, Xi. Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS. Journal of Electronic Materials, 52 (11). Retrieved from https://par.nsf.gov/biblio/10487827. https://doi.org/10.1007/s11664-023-10670-w

Cao, Jun, Li, Tianshu, Gao, Hongze, Cong, Xin, Lin, Miao-Ling, Russo, Nicholas, Luo, Weijun, Ding, Siyuan, Wang, Zifan, Smith, Kevin E., Tan, Ping-Heng, Ma, Qiong, and Ling, Xi. "Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS". Journal of Electronic Materials 52 (11). Country unknown/Code not available: Journal of Electronic Materials. https://doi.org/10.1007/s11664-023-10670-w. https://par.nsf.gov/biblio/10487827.

@article{osti_10487827,
place = {Country unknown/Code not available}, title = {Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS}, url = {https://par.nsf.gov/biblio/10487827}, DOI = {10.1007/s11664-023-10670-w}, abstractNote = {}, journal = {Journal of Electronic Materials}, volume = {52}, number = {11}, publisher = {Journal of Electronic Materials}, author = {Cao, Jun and Li, Tianshu and Gao, Hongze and Cong, Xin and Lin, Miao-Ling and Russo, Nicholas and Luo, Weijun and Ding, Siyuan and Wang, Zifan and Smith, Kevin E. and Tan, Ping-Heng and Ma, Qiong and Ling, Xi}, }