skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: Dislocation formation in the heteroepitaxial growth of PbSe/PbTe systems
The paper presents a multiscale study of the kinetic processes of the heteroepitaxial growth of the PbSe/PbTe (111) and PbTe/PbSe(001) systems, using the Concurrent Atomistic-Continuum (CAC) method as the simulation tool. The CAC simulations have reproduced the Stranski–Krastanov growth mode and the layer-by-layer growth mode of the two systems, respectively; the pyramid-shaped island morphology of the PbSe epilayer on PbTe (111), the square-like misfit dislocation networks within the PbTe/PbSe(001) interface, and the critical thickness for the PbTe/PbSe(001) system at which coherent interfaces transit to semi-coherent interfaces with the formation of misfit dislocations, all in good agreement with experimental observations. Four types of misfit dislocations are found to form during the growth of the two PbTe/PbSe heterosystems, and hexagonal-like misfit dislocation networks are observed within the PbSe/PbTe(111) interfaces. The growth processes, including the formation of misfit dislocations, have been visualized. Dislocation half-loops have been observed to nucleate from the epilayer surfaces. These half-loops extend towards the interface by climb or glide motions, interact with other half-loops, and form misfit dislocation networks at the interfaces and threading dislocations extending from interfaces to epilayer surfaces. The dominant types of misfit dislocations in both systems are found to be those with Burgers vectors parallel to the interfaces, whereas the misfit dislocations with Burgers vectors inclined to the interface have a low likelihood of generation and tend to annihilate. The size of the substrate is demonstrated to have a significant effect on the formation, evolution, and distribution of dislocations on the growth of PbSe on PbTe(111).  more » « less
Award ID(s):
2121895 2054607
PAR ID:
10488372
Author(s) / Creator(s):
; ; ; ; ;
Publisher / Repository:
Elsevier
Date Published:
Journal Name:
Acta Materialia
Volume:
260
Issue:
C
ISSN:
1359-6454
Page Range / eLocation ID:
119308
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; ; (, Journal of Materials Research)
    In this work, we investigate misfit dislocations in PbTe/PbSe heteroepitaxial systems using the concurrent atomistic–continuum (CAC) method. A potential model containing the long-range Coulombic interaction and short-range Buckingham potential is developed for the system. By considering the minimum potential energy of relaxed interface structures for various initial conditions and PbTe layer thicknesses, the equilibrium structure of misfit dislocations and the dislocation spacings in PbTe/PbSe(001) heteroepitaxial thin films are obtained as a function of the PbTe layer thicknesses grown on a PbSe substrate. The critical layer thickness above which misfit dislocations inevitably form, the structure of the misfit dislocations at the interfaces, and the dependence of average dislocation spacing on PbTe layer thickness are obtained and discussed. The simulation results provide an explanation for the narrowing of the spread of the distribution of misfit dislocation spacing as layer thickness increases in PbTe/PbSe(001) heteroepitaxy. 
    more » « less
  2. ; ; ; ; (, Journal of materials research)
    In this work, we investigate misfit dislocations in PbTe/PbSe heteroepitaxial systems using the concurrent atomistic–continuum (CAC) method. A potential model containing the long-range Coulombic interaction and short-range Buckingham potential is developed for the system. By considering the minimum potential energy of relaxed interface structures for various initial conditions and PbTe layer thicknesses, the equilibrium structure of misfit dislocations and the dislocation spacings in PbTe/PbSe(001) heteroepitaxial thin films are obtained as a function of the PbTe layer thicknesses grown on a PbSe substrate. The critical layer thickness above which misfit dislocations inevitably form, the structure of the misfit dislocations at the interfaces, and the dependence of average dislocation spacing on PbTe layer thickness are obtained and discussed. The simulation results provide an explanation for the narrowing of the spread of the distribution of misfit dislocation spacing as layer thickness increases in PbTe/PbSe(001) heteroepitaxy. 
    more » « less
  3. ; ; ; (, Computational Materials Science)
    We present a molecular dynamics study of the thermal transport properties of PbTe/PbSe (111) and PbTe/PbSe (100) interfaces at room temperature. The PbTe/PbSe heterostructures are obtained through simulations of the kinetic processes of direct bonding of PbTe and PbSe crystals. The atomic-scale dislocation core structures and the misfit dislocation networks in the heterostructures obtained in the simulations are found to closely match experimental data. Two types of heat transfer experiments are then simulated: a heat-sink heat-source experiment and an ultrashort heat pulse experiment. Thermal boundary resistance is calculated for three distinct interface types: coherent, semi-coherent, and semi-coherent with pinned dislocations. Both types of simulations consistently capture the significant role of the misfit dislocations on thermal resistance. The effect of the mobility of dislocations on thermal resistance is demonstrated for the first time through comparing the thermal boundary resistance of interfaces containing pinned dislocations and with those containing unpinned dislocations. In addition, the thermal boundary resistance is found to strongly depend on the length of the specimen and the area of the interface. 
    more » « less
  4. ; ; ; ; ; (, Journal of Applied Physics)
    Growth of GeSn films directly on Si substrates is desirable for integrated photonics applications since the absence of an intervening buffer layer simplifies device fabrication. Here, we analyze the microstructure of two GeSn films grown directly on (001) Si by remote plasma-enhanced chemical vapor deposition (RPECVD): a 1000 nm thick film containing 3% Sn and a 600 nm thick, 10% Sn film. Both samples consist of an epitaxial layer with nano twins below a composite layer containing nanocrystalline and amorphous. The epilayer has uniform composition, while the nanocrystalline material has higher levels of Sn than the surrounding amorphous matrix. These two layers are separated by an interface with a distinct, hilly morphology. The transition between the two layers is facilitated by formation of densely populated (111)-coupled nano twins. The 10% Sn sample exhibits a significantly thinner epilayer than the one with 3% Sn. The in-plane lattice mismatch between GeSn and Si induces a quasi-periodic misfit dislocation network along the interface. Film growth initiates at the interface through formation of an atomic-scale interlayer with reduced Sn content, followed by the higher Sn content epitaxial layer. A corrugated surface containing a high density of twins with elevated levels of Sn at the peaks begins forming at a critical thickness. Subsequent epitaxial breakdown at the peaks produces a composite containing high levels of Sn nanocrystalline embedded in lower level of Sn amorphous. The observed microstructure and film evolution provide valuable insight into the growth mechanism that can be used to tune the RPECVD process for improved film quality. 
    more » « less
  5. ; (, Materials Advances)
    Among their numerous technological applications, semi-coherent oxide heterostructures have emerged as promising candidates for applications in intermediate temperature solid oxide fuel cell electrolytes, wherein interfaces influence ionic transport.Since misfit dislocations impact ionic transport in these materials, oxygen vacancy formation and migration at misfit dislocations in oxide heterostructures are central to their performance as an ionic conductor. Herein, we report high-throughput atomistic simulations to predict thousands of activation energy barriers for oxygen vacancy migration at misfit dislocations in SrTiO3/BaZrO3 heterostructures. Dopants display a noticeable effect as higher activation energies are uncovered in their vicinity. Interface layer chemistry has a fundamental influence on the magnitude of activation energy barriers since they are dissimilar at misfit dislocations as compared to coherent terraces. Lower activation energies are uncovered when oxygen vacancies migrate toward misfit dislocations, but higher energies when they hop away, revealing that oxygen vacancies would get trapped at misfit dislocations and impact ionic transport. The results herein offer atomic scale insights into ionic transport at misfit dislocations and fundamental factors governing the ionic conductivity of thin film oxide electrolytes. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email