An official website of the United States government
Abstract The large‐scale growth of semiconducting thin films on insulating substrates enables batch fabrication of atomically thin electronic and optoelectronic devices and circuits without film transfer. Here an efficient method to achieve rapid growth of large‐area monolayer MoSe2films based on spin coating of Mo precursor and assisted by NaCl is reported. Uniform monolayer MoSe2films up to a few inches in size are obtained within a short growth time of 5 min. The as‐grown monolayer MoSe2films are of high quality with large grain size (up to 120 µm). Arrays of field‐effect transistors are fabricated from the MoSe2films through a photolithographic process; the devices exhibit high carrier mobility of ≈27.6 cm2V–1s–1and on/off ratios of ≈105. The findings provide insight into the batch production of uniform thin transition metal dichalcogenide films and promote their large‐scale applications.
more »
« less
Detection of thin film phase transformations at high-pressure and high-temperature in a diamond anvil cell
Abstract Quantifying how grain size and/or deviatoric stress impact (Mg,Fe)2SiO4phase stability is critical for advancing our understanding of subduction processes and deep-focus earthquakes. Here, we demonstrate that well-resolved X-ray diffraction patterns can be obtained on nano-grained thin films within laser-heated diamond anvil cells (DACs) at hydrostatic pressures up to 24 GPa and temperatures up to 2300 K. Combined with well-established literature processes for tuning thin film grain size, biaxial stress, and substrate identity, these results suggest that DAC-loaded thin films can be useful for determining how grain size, deviatoric stress, and/or the coexistence of other phases influence high-pressure phase stability. As such, this novel DAC-loaded thin film approach may find use in a variety of earth science, planetary science, solid-state physics, and materials science applications.
more »
« less
- PAR ID:
- 10490131
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Communications Earth & Environment
- Volume:
- 5
- Issue:
- 1
- ISSN:
- 2662-4435
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract Conjugated polymers consist of complex backbone structures and side‐chain moieties to meet various optoelectronic and processing requirements. Recent work on conjugated polymers has been devoted to studying the mechanical properties and developing new conjugated polymers with low modulus and high‐crack onset strain, while the thin film mechanical stability under long‐term external tensile strain is less investigated. Here we performed direct mechanical stress relaxation tests for both free‐standing and thin film floated on water surface on both high‐Tgand low‐Tgconjugated polymers, as well as a reference nonconjugated sample, polystyrene. We measured thin films with a range of film thickness from 38 to 179 nm to study the temperature and thickness effect on thin film relaxation, where an apparent enthalpy–entropy compensation effect for glassy polymer PS and PM6 thin films was observed. We also compared relaxation times across three different conjugated polymers and showed that both crystalline morphology and higher modulus reduce the relaxation rate besides higher glass transition temperature. Our work provides insights into the mechanical creep behavior of conjugated polymers, which will have an impact on the future design of stable functional organic electronics.more » « less
-
Abstract Atomically thin 2D materials are good templates to grow organic semiconductor thin films with desirable features. However, the 2D materials typically exhibit surface roughness and spatial charge inhomogeneity due to nonuniform doping, which can affect the uniform assembly of organic thin films on the 2D materials. A hybrid template is presented for preparation of highly crystalline small‐molecule organic semiconductor thin film that is fabricated by transferring graphene onto a highly ordered self‐assembled monolayer. This hybrid graphene template has low surface roughness and spatially uniform doping, and it yields highly crystalline fullerene thin films with grain sizes >300 nm, which is the largest reported grain size for C60thin films on 2D materials. A graphene/fullerene/pentacene phototransistor fabricated directly on the hybrid template has five times higher photoresponsivity than a phototransistor fabricated on a conventional graphene template supported by a SiO2wafer.more » « less
-
Combinatorial growth is capable of creating a compositional gradient for thin film materials and thus has been adopted to explore composition variation mostly for metallic alloy thin films and some dopant concentrations for ceramic thin films. This study uses a combinatorial pulsed laser deposition method to successfully fabricate two‐phase oxide–oxide vertically aligned nanocomposite (VAN) thin films of La0.7Sr0.3MnO3(LSMO)‐NiO with variable composition across the film area. The LSMO‐NiO compositional gradient across the film alters the two‐phase morphology of the VAN through varying nanopillar size and density. Additionally, the magnetic anisotropy and magnetoresistance properties of the nanocomposite thin films increase with increasing NiO composition. This demonstration of a combinatorial method for VAN growth can increase the efficiency of nanocomposite thin film research by allowing all possible compositions of thin film materials to be explored in a single deposition.more » « less
-
Abstract State‐of‐the‐art perovskite solar cells (PSCs) have bandgaps that are invariably larger than 1.45 eV, which limits their theoretically attainable power conversion efficiency. The emergent mixed‐(Pb, Sn) perovskites with bandgaps of 1.2–1.3 eV are ideal for single‐junction solar cells according to the Shockley–Queisser limit, and they have the potential to deliver higher efficiency. Nevertheless, the high chemical activity of Sn(II) in these perovskites makes it extremely challenging to control their physical properties and chemical stability, thereby leading to PSCs with relatively low PCE and stability. In this work, the authors employ the Lewis‐adduct SnF2·3FACl additive in the solution‐processing of ideal‐bandgap halide perovskites (IBHPs), and prepare uniform large‐grain perovskite thin films containing continuously functionalized grain boundaries with the stable SnF2phase. Such Sn(II)‐rich grain‐boundary networks significantly enhance the physical properties and chemical stability of the IBHP thin films. Based on this approach, PSCs with an ideal bandgap of 1.3 eV are fabricated with a promising efficiency of 15.8%, as well as enhanced stability. The concept of Lewis‐adduct‐mediated grain‐boundary functionalization in IBHPs presented here points to a new chemical route for approaching the Shockley–Queisser limit in future stable PSCs.more » « less
