In the ever-growing landscape of electrical power demand, the future of power electronics module packaging lies in the realm of wide-bandgap (WBG) materials, including silicon carbide (SiC), gallium nitride (GaN), and cutting-edge ultra WBG (UWBG) materials like diamond, aluminum nitride (AlN), and hexagonal-boron nitride (h-BN). These materials offer superior properties to traditional silicon-based devices, promising higher power density, reduced weight, and increased operating temperature, voltage, and frequency. However, pushing the boundaries for power electronics modules presents challenges in insulation systems as the encapsulation material and the ceramic substrate may not withstand the functional parameters, potentially leading to unfavorable conditions like high field stress and partial discharge (PD), ultimately resulting in insulation failure. This paper presents a thorough analysis of the characteristics of the electrical insulation materials used in power electronics devices based on the research in WBG packaging conducted in recent years. The significance of maximum electric field stress at triple points (TPs) is examined. Furthermore, the paper reviews the strategies and techniques employed to mitigate the challenges related to maximum field stress and PDs in both encapsulation and substrate materials. It is concluded that the mitigation strategies are promising in improving insulation systems for packaging, but the studies lack their implementation under actual operating conditions of WBG power modules.
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This content will become publicly available on March 31, 2025
A Review of Insulation Challenges and Mitigation Strategies in (U)WBG Power Modules Packaging
In the ever-growing landscape of electrical power demand, the future of power electronics module packaging lies in the realm of wide-bandgap (WBG) materials, including silicon carbide (SiC), gallium nitride (GaN), and cutting-edge ultra WBG (UWBG) materials like diamond, aluminum nitride (AlN), and hexagonal-boron nitride (h-BN). These materials offer superior properties to traditional silicon-based devices, promising higher power density, reduced weight, and increased operating temperature, voltage, and frequency. However, pushing the boundaries for power electronics modules presents challenges in insulation systems as the encapsulation material and the ceramic substrate may not withstand the functional parameters, potentially leading to unfavorable conditions like high field stress and partial discharge (PD), ultimately resulting in insulation failure. This paper presents a thorough analysis of the characteristics of the electrical insulation materials used in power electronics devices based on the research in WBG packaging conducted in recent years. The significance of maximum electric field stress at triple points (TPs) is examined. Furthermore, the paper reviews the strategies and techniques employed to mitigate the challenges related to maximum field stress and PDs in both encapsulation and substrate materials. It is concluded that the mitigation strategies are promising in improving insulation systems for packaging, but the studies lack their implementation under actual operating conditions of WBG power modules.
more »
« less
- Award ID(s):
- 2306093
- NSF-PAR ID:
- 10492458
- Publisher / Repository:
- IEEE
- Date Published:
- Journal Name:
- IEEE Texas Power and Energy Conference (TPEC)
- Format(s):
- Medium: X
- Location:
- College Station, TX, USA
- Sponsoring Org:
- National Science Foundation
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Within the expanding domain of electrical power demand, the future of power module packaging is entwined with the progress of (ultra) wide bandgap (UWBG) materials. These materials, like silicon carbide (SiC), aluminum nitride (AlN), and diamond, offer advantages with higher power density, decreased weight, and expanded operational abilities regarding temperature, voltage, and frequency. However, the pursuit of pushing these limits confronts challenges within insulation systems, which may struggle to endure the demands of these parameters, potentially resulting in unfavorable conditions like high electric field, space charge accumulation, electrical treeing, and partial discharge (PD), leading to insulation failure. The emphasis of this paper is to review the insulation challenges within (U)WBG power modules and recent research in mitigating the electric field stress at triple points (TPs) and resolving the PD issues. The manuscript first discusses the high electric field stress issue at triple points. Then, ceramic substrate materials, encapsulation materials, and the influence of harsh weather conditions on them are reviewed. The space charge, electrical treeing, and PD issues within encapsulation materials are analyzed under practical operation conditions of (U)WBG power modules like high frequency, temperature, and square wave pulses. Finally, the various strategies to alleviate the associated insulation challenges are meticulously discussed. While the identified mitigation strategies are able to strengthen insulation systems for packaging, their validation under actual operational conditions of (U)WBG power modules remains relatively unexplored, representing a potential avenue for further investigation. This review offers a valuable framework by providing the constraints of the current studies and recommendations for the future that can be utilized as a reference point for future research endeavors.more » « less
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null (Ed.)Our previous studies showed that geometrical techniques including (1) metal layer offset, (2) stacked substrate design and (3) protruding substrate, either individually or combined, cannot solve high electric field issues in high voltage high-density wide bandgap (WBG) power modules. Then, for the first time, we showed that a combination of the aforementioned geometrical methods and the application of a nonlinear field-dependent conductivity (FDC) layer could address the issue. Simulations were done under a 50 Hz sinusoidal AC voltage per IEC 61287-1. However, in practice, the insulation materials of the envisaged WBG power modules will be under square wave voltage pulses with a frequency of up to a few tens of kHz and temperatures up to a few hundred degrees. The relative permittivity and electrical conductivity of aluminum nitride (AlN) ceramic, silicone gel, and nonlinear FDC materials that were assumed to be constant in our previous studies, may be frequency- and temperature-dependent, and their dependency should be considered in the model. This is the case for other papers dealing with electric field calculation within power electronics modules, where the permittivity and AC electrical conductivity of the encapsulant and ceramic substrate materials are assumed at room temperature and for a 50 or 60 Hz AC sinusoidal voltage. Thus, the big question that remains unanswered is whether or not electric field simulations are valid for high temperature and high-frequency conditions. In this paper, this technical gap is addressed where a frequency- and temperature-dependent finite element method (FEM) model of the insulation system envisaged for a 6.5 kV high-density WBG power module will be developed in COMSOL Multiphysics, where a protruding substrate combined with the application of a nonlinear FDC layer is considered to address the high field issue. By using this model, the influence of frequency and temperature on the effectiveness of the proposed electric field reduction method is studied.more » « less
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null (Ed.)Abstract Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.more » « less
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