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1. Countdown to perovskite space lunch: Guidelines to performing relevant radiation-hardness experiments

   https://doi.org/https://doi.org/10.1016/j.joule.2022.03.004  

   Kirmani, Ahmad R. ; Durant, Brandon K. ; Grandidier, Jonathan ; Haegel, Nancy M. ; Kelzenberg, Michael D. ; Lao, Yao M. ; McGehee, Michael D. ; McMillon-Brown, Lyndsey ; Ostrowski, David P. ; Peshek, Timothy J. ; et al ( May 2022 , Joule)

   Earis, Philip (Ed.)

   Perovskite photovoltaics (PVs) are under intensive development for promise in terrestrial energy production. Soon, the community will find out how much of that promise may become reality. Perovskites also open new opportunities for lower cost space power. However, radiation tolerance of space environments requires appropriate analysis of relevant devices irradiated under representative radiation conditions. We present guidelines designed to rigorously test the radiation tolerance of perovskite PVs. We review radiation conditions in common orbits, calculate nonionizing and ionizing energy losses (NIEL and IEL) for perovskites, and prioritize proton radiation for effective nuclear interactions. Low-energy protons (0.05–0.15 MeV) create a representative uniform damage profile, whereas higher energy protons (commonly used in ground-based evaluation) require significantly higher fluence to accumulate the equivalent displacement damage dose due to lower scattering probability. Furthermore, high-energy protons may ‘‘heal’’ devices through increased electronic ionization. These procedural guidelines differ from those used to test conventional semiconductors. 

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2. Photovoltaic Response of Thin-Film CdTe Solar Cells under Accelerated Neutron Radiation in a TRIGA Reactor

   Powell, Kaden ; Lund, Matthew ; Wang, Meng-Jen ; Qian, Yang ; Magginetti, David ; Reese, Matthew ; Cazalas, Edward ; Sjoden, Glenn ; Yoon, Heayoung ( June 2020 , Electronic Materials Symposium)

   Cadmium telluride (CdTe) solar cells are a promising photovoltaic (PV) technology for producing power in space owing to their high-efficiency (> 22.1 %), potential for specific power, and cost-effective manufacturing processes. In contrast to traditional space PVs, the high-Z (atomic number) CdTe absorbers can be intrinsically robust under extreme space radiation, offering long-term stability. Despite these advantages, the performance assessment of CdTe solar cells under high-energy particle irradiation (e.g., photons, neutrons, charged particles) is limited in the literature, and their stability is not comprehensively studied. In this work, we present the PV response of n-CdS / p-CdTe PVs under accelerated neutron irradiation. We measure PV properties of the devices at different neutron/photon doses. The equivalent dose deposited in the CdTe samples is simulated with deterministic and Monte Carlo radiation transport methods. Thin-film CdTe solar cells were synthesized on a fluorine-doped tin oxide (FTO) coated glass substrate (≈ 4 cm × 4 cm). CdS:O (≈ 100 nm) was reactively RF sputtered in an oxygen/argon ambient followed by a close-spaced sublimation deposition of CdTe (≈ 3.5 μm) in an oxygen/helium ambient. The sample was exposed to a 10 min vapor CdCl2 in oxygen/helium ambient at 430˚C. The samples were exposed to a wet CuCl2 solution prior to anneal 200ºC. A gold back-contact was formed on CdTe via thermal evaporation. The final sample contains 16 CdTe devices. For neutron irradiation, we cleaved the CdTe substrate into four samples and exposed two samples to ≈ 90 kW reactor power neutron radiation for 5.5 hours and 8.2 hours, respectively, in our TRIGA (Training, Research, Isotopes, General Atomics) reactor. We observed a noticeable color change of the glass substrates to brown after the neutron/gamma reactor exposure. Presumably, the injected high-energy neutrons caused the breaking of chemical bonds and the displacement of atoms in the glass substrates, creating point defects and color centers. The I-V characteristics showed noticeable deterioration with over 8 hour radiations. Specifically, the saturation current of the control devices was ≈ 25 nA increasing to 1 μA and 10 μA for the 5.5-hour and 8.2-hour radiated samples, respectively. The turn-on voltage of the control devices (≈ 0.85 V) decreased with the irradiated sample (≈ 0.75 V for 5.5-hour and ≈ 0.5 V for 8.2-hour exposures), implying noticeable radiation damage occurred at the heterojunction. The higher values of the ideality factor for irradiated devices (n > 2.2) compared to that of the control devices (n ≈ 1.3) also support the deterioration of the p-n junction. We observed the notable decrease in shunt resistance (RSH) and the increase in series resistance (Rs) with the neutron dose. It is possible that Cu ions introduced during the CuCl2 treatment may migrate into CdTe grain boundaries (GBs). The presence of Cu ions at GBs can create additional leakage paths for photocarrier transport, deteriorating the overall PV performance. We estimated the radiation dose of CdTe in comparison to Si (conventional PV) using a UUTR model (e.g., MCNP6 2D UTR Reactor simulations). In this model, we simulated Si and CdTe at the center point of the triangular fuel lattice and used an “unperturbed flux” tally in the water. Our simulations yielded a dose rate of 6916 Gy/s of neutrons and 16 Gy/s of photons for CdTe, and 1 Gy/s of neutrons and 21 Gy/s of photons for Si (doses +/- <1%). The large dose rate of neutrons in CdTe is mainly attributed to the large thermal neutron absorption cross-section of 113Cd. Based on this estimation, we calculate that the exposure of our CdTe PVs is equivalent to several million years in LEO (Low-Earth Orbit), or about 10,000 years for Si in LEO. Currently, we are working on a low-dose neutron/photon radiation on CdTe PVs and their light I-Vs and microstructural characterizations to gain better understanding on the degradation of CdTe PVs. 

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3. Radiation tolerance and self-healing in triple halide perovskite solar cells

   https://doi.org/10.1063/5.0158216  

   Afshari, Hadi ; Chacon, Sergio A. ; Sourabh, Shashi ; Byers, Todd A. ; Whiteside, Vincent R. ; Crawford, Rose ; Rout, Bibhudutta ; Eperon, Giles E. ; Sellers, Ian R. ( September 2023 , APL Energy)

   The high tolerance and stability of triple halide perovskite solar cells is demonstrated in practical space conditions at high irradiation levels. The solar cells were irradiated for a range of proton energies (75 keV, 300 keV, and 1 MeV) and fluences (up to 4 × 1014 p/cm2). The fluences of the energy proton irradiations were varied to induce the same amount of vacancies in the absorber layer due to non-ionizing nuclear energy loss (predominant at <300 keV) and electron ionization loss (predominant at >300 keV). While proton irradiation of the solar cells initially resulted in degradation of the photovoltaic parameters, self-healing was observed after two months where the performance of the devices was shown to return to their pristine operation levels. Their ability to recover upon radiation exposure supports the practical potential of perovskite solar cells for next-generation space missions.

    

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4. Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga 2 O 3

   https://doi.org/10.1149/2162-8777/ac8bf7  

   Xia, Xinyi ; Li, Jian-Sian ; Sharma, Ribhu ; Ren, Fan ; Rasel, Md Abu ; Stepanoff, Sergei ; Al-Mamun, Nahid ; Haque, Aman ; Wolfe, Douglas E. ; Modak, Sushrut ; et al ( September 2022 , ECS Journal of Solid State Science and Technology)

   We present a review of the published experimental and simulation radiation damage results in Ga 2 O 3 . All of the polytypes of Ga 2 O 3 are expected to show similar radiation resistance as GaN and SiC, considering their average bond strengths. However, this is not enough to explain the orders of magnitude difference of the relative resistance to radiation damage of these materials compared to GaAs and dynamic annealing of defects is much more effective in Ga 2 O 3 . It is important to examine the effect of all types of radiation, given that Ga 2 O 3 devices will potentially be deployed both in space and terrestrial applications. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga 2 O 3 , which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials (Ga i ), vacancies (V Ga ), and antisites (Ga O ). One of the most important parameters to establish is the carrier removal rate for each type of radiation, since this directly impacts the current in devices such as transistors or rectifiers. When compared to the displacement damage predicted by the Stopping and Range of Ions in Matter(SRIM) code, the carrier removal rates are generally much lower and take into account the electrical nature of the defects created. With few experimental or simulation studies on single event effects (SEE) in Ga 2 O 3 , it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high Linear Energy Transfer (LET) and at much lower biases than expected. We have analyzed the transient response of β -Ga 2 O 3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage. Such biased rings help in the removal of the charge deposited by the ion strike. 

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5. Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force

   https://doi.org/10.1149/2162-8777/ac7f5a  

   Rasel, Md Abu ; Stepanoff, Sergei ; Haque, Aman ; Wolfe, Douglas E. ; Ren, Fan ; Pearton, Stephen ( July 2022 , ECS Journal of Solid State Science and Technology)

   Radiation damage mitigation in electronics remains a challenge because the only established technique, thermal annealing, does not guarantee a favorable outcome. In this study, a non-thermal annealing technique is presented, where electron momentum from very short duration and high current density pulses is used to target and mobilize the defects. The technique is demonstrated on 60 Co gamma irradiated (5 × 10 6 rad dose and 180 × 10 3 rad h −1 dose rate) GaN high electron mobility transistors. The saturation current and maximum transconductance were fully and the threshold voltage was partially recovered at 30 °C or less. In comparison, thermal annealing at 300 °C mostly worsened the post-irradiation characteristics. Raman spectroscopy showed an increase in defects that reduce the 2-dimensional electron gas (2DEG) concentration and increase the carrier scattering. Since the electron momentum force is not applicable to the polymeric surface passivation, the proposed technique could not recover the gate leakage current, but performed better than thermal annealing. The findings of this study may benefit the mitigation of some forms of radiation damage in electronics that are difficult to achieve with thermal annealing. 

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