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   Stepanenko, Iryna; Mizetskyi, Pavlo; Orlowska, Ewelina; Bučinský, Lukáš; Zalibera, Michal; Vénosová, Barbora; Clémancey, Martin; Blondin, Geneviève; Rapta, Peter; Novitchi, Ghenadie; et al (January 2022, Inorganic Chemistry)
2. Poisson boundaries of II ₁ factors

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   Das, Sayan; Peterson, Jesse (August 2022, Compositio Mathematica)

   We introduce Poisson boundaries of II $$_1$$ factors with respect to density operators that give the traces. The Poisson boundary is a von Neumann algebra that contains the II $$_1$$ factor and is a particular example of the boundary of a unital completely positive map as introduced by Izumi. Studying the inclusion of the II $$_1$$ factor into its boundary, we develop a number of notions, such as double ergodicity and entropy, that can be seen as natural analogues of results regarding the Poisson boundaries introduced by Furstenberg. We use the techniques developed to answer a problem of Popa by showing that all finite factors satisfy his MV property. We also extend a result of Nevo by showing that property (T) factors give rise to an entropy gap. 

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   We fabricated a van der Waals heterostructure of WS 2 –ReSe 2 and studied its charge-transfer properties. Monolayers of WS 2 and ReSe 2 were obtained by mechanical exfoliation and chemical vapor deposition, respectively. The heterostructure sample was fabricated by transferring the WS 2 monolayer on top of ReSe 2 by a dry transfer process. Photoluminescence quenching was observed in the heterostructure, indicating efficient interlayer charge transfer. Transient absorption measurements show that holes can efficiently transfer from WS 2 to ReSe 2 on an ultrafast timescale. Meanwhile, electron transfer from ReSe 2 to WS 2 was also observed. The charge-transfer properties show that monolayers of ReSe 2 and WS 2 form a type-II band alignment, instead of type-I as predicted by theory. The type-II alignment is further confirmed by the observation of extended photocarrier lifetimes in the heterostructure. These results provide useful information for developing van der Waals heterostructure involving ReSe 2 for novel electronic and optoelectronic applications and introduce ReSe 2 to the family of two-dimensional materials to construct van der Waals heterostructures. 

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